Methodical problems of crosstalk probability measurements in solid-state photomultipliers

Futlik, L; Levin, E. V.; Vinogradov, Sergey; Shubin, V. G.; Shushakov, D. A.; Sitarskii, K. Yu.; Shelegeda, E. V.

doi:10.3103/s1068335611100058

Cited by 6 publications

(3 citation statements)

References 10 publications

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“…The distribution of the crosstalk probability p xt , as evaluated by fitting the modified Erlang distribution to the measured dark count spectra, is depicted in Figure 7. To account for coincident random breakdowns inside the integration window, the crosstalk probability is corrected as described in Futlik et al (2011). Using the measured dark count rate for each pixel, the crosstalk probability is corrected using formula (2) of the above paper.…”

Section: Resultsmentioning

confidence: 99%

Calibration of 122 Sensl Microfj-60035 Sipms and the Reduction of Optical Cross-Talk Due to Coupled Light Guides

Rehbein,

Bretz,

Biland

et al. 2023

RMxAA

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Recent silicon photomultipliers (SiPMs) boast excellent production quality, eliminating the need for individual breakdown voltage calibration. We present measurements of cross-talk probability and relative gain for 122 SensL MicroFJ-60035-TSV SiPMs. These semiconductor photosensors have replaced photomultiplier tubes in many applications due to their single-photon resolution, insensitivity to magnetic fields, robustness, and cost-effective photon detection at lower voltages. Light guides expand SiPMs' small photosensitive area, and optical coupling reduces cross-talk probability compared to bare sensors at nominal bias voltage, as demonstrated in this study.

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Section: Resultsmentioning

confidence: 99%

Calibration of 122 Sensl Microfj-60035 Sipms and the Reduction of Optical Cross-Talk Due to Coupled Light Guides

Rehbein,

Bretz,

Biland

et al. 2023

RMxAA

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“…Therefore, we used a correction factor for the direct cross-talk (DiCT) calculation. Using the formula reported in [27] with a minor modification. In our case, the not-corrected cross-talk was calculated as the ratio of the count rate (or equivalently the probability) of the 2 p.e.…”

Section: Correlated Noisementioning

confidence: 99%

Characterization of Silicon Photomultipliers after proton irradiation up to $10^{12} n_{eq}/mm^2$

Altamura,

Acerbi,

Nociforo

et al. 2021

Preprint

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Silicon photomultipliers (SiPMs) are highly-sensitive photodetectors emerging as the technology of choice for many applications, including large high-energy physics experiments where they often are exposed to high radiation fluences. In recent years, there has been an increasing interest in assessing the performance deterioration of such detectors after the irradiation with proton or neutron, with different fluence levels.In this work, samples of different FBK SiPM technologies, made with different manufacturing technologies, were irradiated at the INFN-LNS facility (Italy) with protons reaching fluences up to 10 12 n eq {mm 2 (1 MeV neutron equivalent) which correspond 10 14 n eq {cm 2 to and their performances were characterized in detail after an approximately 30 days room temperature annealing. The results show a significant worsening of the primary noise (dark count rate) of the detectors, which increases with the irradiation dose, whereas the other performance parameters like the micro-cell gain, the correlated noise probability and the photon detection efficiency do not show significant variations over the investigated dose range. The breakdown voltage estimation after irradiation is another important aspect for a SiPM. In this contribution, we show several methods for its estimation and compare the results. We also introduced new methodologies to characterize the performance of the SiPMs when they present a very high level of noise.Lastly, we also analyzed the spatial localization of the proton-induced defects inside the device, i.e. the defects that mostly contribute to the increase of the DCR of the device, through the emission microscopy (EMMI) technique. In particular, we analyzed the SiPMs at the single cell level, trying to identify and spatially localize the defects.

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“…This last can be evaluated considering that at lower temperatures (meaning lower DCR) the OCT is less affected by the pile-up. Being the OCT 7.0 % at 3°C (DCR about 0.55 MCnts/s) and 9.0 % at 15°C (DCR about 1.3 MCnts/s), the pile-up effect can be derived considering the relation between the true and the apparent OCT [30]:…”

Section: A Dark Count Rate and Optical Cross-talkmentioning

confidence: 99%

Novel silicon photomultipliers suitable for dual-mirror small-sized telescopes of the Cherenkov telescope array

Romeo

Bonanno

Sironi

et al. 2018

Nuclear Instruments and Methods in Physics Research Section A:

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Many of the characteristics of Silicon Photomultipliers (SiPMs), such as high Photon Detection Efficiency (PDE), are well matched to the requirements of the cameras of the Small-Sized Telescopes (SSTs) proposed for the Cherenkov Telescope Array. In fact, compared to a single mirror, the double mirror Schwarzschild-Couder configuration provides a much better Point Spread Function over a large field of view. It allows better correction of aberrations at large off-axis angles and facilitates the construction of compact telescopes. Moreover, the small plate scale of the dual-mirror SSTs allows the use of SiPM detectors despite their small pixel sizes. These sensors have two further advantages compared to the Photo Multipliers Tubes: the low cost and the possibility to observe in very high Night Sky Background (NSB) light level without any damage. However, one area in which SiPM performance has required improvement is Optical Cross-Talk (OCT), where multiple avalanches are induced by a single impinging photon. OCT, coupled with the typical NSB rate of 25 MCnts/s per pixel during Cherenkov observations, can place severe constraints on the triggering capability of the cameras. This paper describes the performance of novel Low Voltage Reverse (LVR) 2 nd and 3 rd generation Multi-Pixel Photon Counters manufactured by Hamamatsu Photonics. These are designed to have both enhanced PDE and reduced OCT. Two 7 × 7 mm 2 S14520 LVR2 MPPCs with 75 μm micro-cells are tested and compared with detectors of the same pixel size with 50 μm micro-cells. A comparative analysis of a 3 × 3 mm 2 S14520 LVR2 device and an S14520 LVR3 device is also carried out, demonstrating that the LVR3 gives better photon detection in the 240 -380 nm wave-length range. Finally, the effect of an infrared filter on the OCT is analysed.

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Methodical problems of crosstalk probability measurements in solid-state photomultipliers

Cited by 6 publications

References 10 publications

Calibration of 122 Sensl Microfj-60035 Sipms and the Reduction of Optical Cross-Talk Due to Coupled Light Guides

Calibration of 122 Sensl Microfj-60035 Sipms and the Reduction of Optical Cross-Talk Due to Coupled Light Guides

Characterization of Silicon Photomultipliers after proton irradiation up to $10^{12} n_{eq}/mm^2$

Novel silicon photomultipliers suitable for dual-mirror small-sized telescopes of the Cherenkov telescope array

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