Methodology for the characterization and observation of filamentary spots in HfOx-based memristor devices

Poblador, Samuel; Maestro-Izquierdo, Marcos; Zabala, M.; González, M.B.; Campabadal, F.

doi:10.1016/j.mee.2020.111232

Cited by 23 publications

(12 citation statements)

References 23 publications

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“…Each memristor consists of a metal/insulator/metal structure in which the conductance of the insulator can be set to different values by applying electrical stresses. [16][17][18] In this type of device, the conductance change is driven by the formation and disruption of a conductive nanofilament across the insulating film, [19][20][21][22][23][24] and in many cases the disruption of the filament (and therefore the reset event) is a thermal effect. [25,26] Therefore, studying the temperature of the memristor with a high lateral resolution (below 100 nm) is very important to understand the functioning of these devices.…”

Section: Resultsmentioning

confidence: 99%

Inkjet Printing: A Cheap and Easy‐to‐Use Alternative to Wire Bonding for Academics

Liu

Zhu

Hui

et al. 2021

Crystal Research and Technology

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Many groups in academia are having problems patterning interconnections to small electrodes using wire bonding, including metal melting and detachment of previously bonded wires. It is a fact that the industry makes reliable wire bonding using automatic setups and expert personnel, and also that many groups in academia can do wire bonding reliably. However, it is also true that wire bonding is much more problematic than other techniques often employed to pattern interconnections, such as lithography or inkjet printing. In this article, the contact resistance and maximum currents driven by metallic interconnections patterned via wire bonding, lithography, and inkjet printing are compared. It is concluded that interconnections patterned via inkjet printing meet the requirements of many types of experiments, and that inkjet printing is a very cheap and easy-to-use alternative to wire bonding, especially attractive for academics.

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Section: Resultsmentioning

confidence: 99%

Inkjet Printing: A Cheap and Easy‐to‐Use Alternative to Wire Bonding for Academics

Liu

Zhu

Hui

et al. 2021

Crystal Research and Technology

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“…The top metal electrode consists of a (200 nm TiN/10 nm Ti) bi-layer and the 50 nm-thick W bottom electrode was deposited on a 20 nm-thick Ti layer adherence layer on the silicon substrate. The electrical contact to the W layer is made by Al-metallizing the back of the Si wafer, and the 10 nm-thick HfO 2 dielectric layer was grown by ALD [45], see Fig. 1a.…”

Section: Device Description and Measurementmentioning

confidence: 99%

“…Moreover, to shed light on the purely numerical procedures that lay behind the extraction process, we have also incorporated comprehensive and physically-based kinetic Monte Carlo (kMC) simulations. In doing so, we pursue the analysis of the step-by-step evolution of conductive filaments (CF) along the device set and reset processes [39][40][41][42][43][44], taking into consideration that our devices show filamentary conduction [45]. We deepen on the physical mechanisms that control the formation and rupture of percolation paths (the conductive filaments) within a microscopic simulation that includes the 3D solution of the thermal and Poisson equations along with the RS dynamics described by a kinetic Monte Carlo algorithm [39,41].…”

Section: Introductionmentioning

confidence: 99%

Variability Estimation in Resistive Switching Devices, a Numerical and Kinetic Monte Carlo Perspective

Maldonado¹,

Aldana²,

González³

et al. 2022

SSRN Journal

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“…Another memristive device was presented with ALD encapsulation of 10 nm HfO 2 film at 225 °C using TDMAH and H 2 O as precursors and N 2 as carrier and purge gas. The device structure was TiN/Ti/HfO 2 /W on a 100 mm diameter Si-n ++ wafer [147,148]. A1N based memristor devices were presented [149].…”

Section: B Pdms Encapsulationmentioning

confidence: 99%

Memristor Fabrication Through Printing Technologies: A Review

Ali

Khan

et al. 2021

IEEE Access

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Memristor got the significant attraction to be the next generation memory device due to its small size, simple architecture, high density, and low power consumption. A memristor is a passive twoterminal primary electronic device with a built-in non-volatile memory function that can be fabricated in a crossbar structure. In the literature, independent studies have been reported on memristor manufacturing concerning the spatial resolution of the crossbar electrodes, and thickness of the active layer. However, this paper presents a comprehensive review different from others by comparing all the additive manufacturing technologies and their limitations for the development of a memristor array. A detailed study is performed about the pattern resolution, active layer fabrication, commonly used substrates, and device encapsulation methods. This review will provide a strong basis for the researchers, especially those working in the field of printed memristor devices.INDEX TERMS Memristor, printing technologies, thin films, crossbar electrodes, memristor fabrication.

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Methodology for the characterization and observation of filamentary spots in HfOx-based memristor devices

Cited by 23 publications

References 23 publications

Inkjet Printing: A Cheap and Easy‐to‐Use Alternative to Wire Bonding for Academics

Inkjet Printing: A Cheap and Easy‐to‐Use Alternative to Wire Bonding for Academics

Variability Estimation in Resistive Switching Devices, a Numerical and Kinetic Monte Carlo Perspective

Memristor Fabrication Through Printing Technologies: A Review

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