1982
DOI: 10.1016/0040-6090(82)90190-0
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Methods and applications of plasmatron high rate sputtering in microelectronics, hybrid microelectronics and electronics

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1986
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Cited by 16 publications
(2 citation statements)
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“…Tin oxide (SnO 2 ) is one of the most important n-type wide-band gap (3.6 eV) semiconductor. Its unique conductance has been utilized for various applications like gas sensors [1], microelectronics [2], solar cells [3] and photoelectrochemistry [4]. The compound has also been examined as possible electrode material for lithium cells [5] and photocatalysts [6].…”
Section: Introductionmentioning
confidence: 99%
“…Tin oxide (SnO 2 ) is one of the most important n-type wide-band gap (3.6 eV) semiconductor. Its unique conductance has been utilized for various applications like gas sensors [1], microelectronics [2], solar cells [3] and photoelectrochemistry [4]. The compound has also been examined as possible electrode material for lithium cells [5] and photocatalysts [6].…”
Section: Introductionmentioning
confidence: 99%
“…It has a wide band gap (3.6 eV) and is a n-type semiconductor. It has its utility in various applications, viz., gas sensors 8 , microelectronics 9 , solar cells 10 , and photoelectrochemistry 11 due to its unique conductance. It is also used as electrode material for lithium cells 12 and as photocatalysts 13 .…”
Section: Introductionmentioning
confidence: 99%