Methods for modeling microwave plasma system stability

Rummel, Paul; Grotjohn, T.A.

doi:10.1116/1.1453454

Cited by 9 publications

(4 citation statements)

References 11 publications

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“…The experimental methodology and data presentation for the electrical measurements are developed from the work of Rayner et al [18] and Rummel and Grotjohn [19]. In this work, this is achieved by establishing a perfect H-mode and then evaluating the H-mode mismatch as a function of the matching network settings and noting the SWR of the circuit.…”

Section: Standing Wave Ratio Mapping Methodologymentioning

confidence: 99%

Chlorine plasma system instabilities within an ICP tool driven at a frequency of 13.56 MHz

Soberon

Marro

Graham

et al. 2006

Plasma Sources Sci. Technol.

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Many of today's continuous-wave plasma etch processes of semiconductor devices utilize chlorine or chlorine-based gases which require stable power delivery conditions. When the plasma process is intentionally (pulsed) or unintentionally driven into an unstable mode, the population of electronegative species become time-dependent. This paper examines the instability coupling between the external circuit and a chlorine plasma within an inductively coupled plasma tool. Standing-wave ratio measurements are used to map instabilities in a 2 mTorr pure chlorine discharge, as a function of power and the parallel capacitor (C P ) of the T network (matching box and antenna). At low power (<180 W) no instabilities are observed whether the system is matched or mismatched. Instabilities are only observed at input power levels from 180 to 280 W when the system is matched. At larger powers (>280 W) instabilities are observed when the system is mismatched with respect to the system input impedance (50 ) and the mismatch makes the load reactance negative. The asymmetry of the match is explained using an equivalent electrical model and power balance arguments. The methodology developed allows the identification of four different types of instability and indicates operating regimes which will be free of instabilities.

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Section: Standing Wave Ratio Mapping Methodologymentioning

confidence: 99%

Chlorine plasma system instabilities within an ICP tool driven at a frequency of 13.56 MHz

Soberon

Marro

Graham

et al. 2006

Plasma Sources Sci. Technol.

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“…For high power equipment, a motorized sliding short circuit and automatic tuner can be used to compensate for variations of the reflected power, which represents a measure of plasma stability. However, operating at a minimum reflected power implies operation very close to or at unstable conditions that can lead to plasma loss or fluctuations (non‐uniform) . Another reason for instability is small fluctuations in the microwave frequency, which causes variations in the electron density, largely influencing the plasma frequency .…”

Section: State Of Development and Outlookmentioning

confidence: 99%

Microwave plasma emerging technologies for chemical processes

Fuente

Kiss

Radoiu

et al. 2017

J of Chemical Tech & Biotech

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15Microwave plasma (MWP) technology is currently being used in application fields such as 16 semiconductor and material processing, diamond film deposition and waste remediation. 17Specific advantages of the technology include the enablement of a high energy density source 18 and a highly reactive medium, the operational flexibility, the fast response time to inlet 19 variations and the low maintenance costs. These aspects make MWP a promising alternative 20 technology to conventional thermal chemical reactors provided that certain technical and 21 operational challenges related to scalability are overcome. Herein, an overview of state-of-22 the-art applications of MWP in chemical processing is presented (e.g. stripping of photo 23 resist, UV-disinfection, waste gas treatment, plasma reforming, methane coupling to olefins, 24 coal/biomass/waste pyrolysis/gasification and CO 2 conversion). In addition, two potential 25 approaches to tackle scalability limitations are described, namely the development of a single 26 unit microwave generator with high output power (> 100 kW), and the coupling of multiple 27 microwave generators with a single reactor chamber.

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“…Many simulations of the gas dissociative reactions in CF 4 /O 2 gas have been reported for capacitively coupled plasma (CCP) 8) and inductively coupled plasma (ICP). 9) An equivalent circuit for microwave plasma was proposed, [10][11][12] and the stability of the plasma and its spatial distribution were calculated. However, there have been few reports on the simulation of gas dissociation in CF 4 /O 2 gas excited by a microwave.…”

Section: Introductionmentioning

confidence: 99%

Simulations and Experiments on O Density and Distribution in Ashing Process Using Surface Plasma Excited by Microwave

Takagi

Yamauchi

Shinmura

2013

Jpn. J. Appl. Phys.

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Simulation methods for the density and spatial distribution of O atoms have been developed to analyze high-density plasma (1011 cm-3) excited by two microwave sources. The density of O atoms, that react with photoresist, was calculated in a gas mixture of CF4 and O2, and the density has a maximum value at 10% CF4 partial pressure. For the distribution simulation, the rate of reaction between O atoms and photoresist was measured in a small cell, and the sticking coefficient was estimated to be 0.002. The O atom distribution on a glass substrate was calculated by the simulator, where the sticking coefficient was input, focusing on the density under a beam that connected the microwave sources and had no plasma source. The results of both the simulations are in good agreement with the experimental results. The simulations were applied to optimize the chamber configuration and process conditions. As a result, a high ashing rate of over 1430 nm with a uniformity of ±9.3% was obtained.

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Methods for modeling microwave plasma system stability

Cited by 9 publications

References 11 publications

Chlorine plasma system instabilities within an ICP tool driven at a frequency of 13.56 MHz

Chlorine plasma system instabilities within an ICP tool driven at a frequency of 13.56 MHz

Microwave plasma emerging technologies for chemical processes

Simulations and Experiments on O Density and Distribution in Ashing Process Using Surface Plasma Excited by Microwave

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