Methods of controlling cross-linking in negative-tone resists

Lawson, Richard A.; Chun, Jun Sung; Neisser, Mark; Tolbert, Laren M.; Henderson, Clifford L.

doi:10.1117/12.2046616

Cited by 12 publications

(6 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is a blended formulation of xMT resin, molecular epoxy crosslinker and a sulfonium photoacid generator mixed in 0.2:2:1 weight ratio with the addition of 5% quencher in the form of a photo-decomposable nucleophile that controls epoxy crosslinking [7]. The chemical structures of the components are shown in figure 1.…”

Section: Resultsmentioning

confidence: 99%

Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography

Frommhold

McClelland²,

Roth

et al. 2016

SPIE Proceedings

View full text Add to dashboard Cite

We have recently introduced a new molecular resist system that demonstrates high-resolution capability. A series of studies such as quencher choice and loading was conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 3.56 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to resolve 11 nm hp features with 5.9 nm LWR. First exposure results on an NXE3300 are also presented. We have also begun to investigate the addition of metals to EUV photoresist as a means to increase sensitivity and modify secondary electron blur. Initial results for one of the metal additives show that the sensitivity could be enhanced by up to 60 percent.

show abstract

Section: Resultsmentioning

confidence: 99%

Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography

Frommhold

McClelland²,

Roth

et al. 2016

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…The baseline material for the optimization efforts is the previously introduced xMT resist [12]. It is a blended formulation of xMT resin, molecular epoxy crosslinker and a sulfonium photoacid generator mixed in 0.2:2:1 weight ratio with the addition of a quencher in the form of a photo-decomposable nucleophile that controls epoxy crosslinking [13,14]. The chemical structures of the components are shown in figure 1.…”

Section: Resultsmentioning

confidence: 99%

Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography

Popescu

Frommhold

McClelland³

et al. 2017

SPIE Proceedings

View full text Add to dashboard Cite

Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the multi-trigger concept. A series of studies such as resist purification, developer choice,and enhanced resist crosslinking were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 2.7 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to pattern 14 nm hp features with dose of 14 mJ/cm 2 with an LWR of 4.9 nm. We have also begun to investigate the addition of high-Z additives to EUV photoresist as a means to increase sensitivity and modify secondary electron blur.

show abstract

“…The baseline material for the optimization efforts is the previously introduced xMT resist [7]. It is a blended formulation of xMT resin, molecular epoxy crosslinker and a sulfonium photoacid generator mixed in 0.2:2:1 weight ratio with the addition of a quencher in the form of a photo-decomposable nucleophile that controls epoxy crosslinking [8,9]. The chemical structures of the components are shown in figure 1.…”

Section: Resultsmentioning

confidence: 99%

Multi-trigger resist for electron beam lithography

Popescu

McClelland²,

Dawson

et al. 2017

33rd European Mask and Lithography Conference

View full text Add to dashboard Cite

Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the Multi-trigger concept. In a Multi-Trigger resist, multiple distinct chemical reactions in chemical amplification process must take place in close proximity simultaneously during resist exposure. Thus, at the edge of a pattern feature, where the density of photo-initiators that drive the chemical reactions is low, the amplification process ceases. This significantly reduces blurring effects and enables much improved resolution and line edge roughness while maintaining the sensitivity advantages of chemical amplification. A series of studies such as enhanced resist crosslinking, elimination of the nucleophilic quencher and the addition of high-Z additives to e-beam resist (as a means to increase sensitivity and modify secondary electron blur) were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning down to 28 nm pitch lines with a dose of 248 µC/cm 2 using 100kV e-beam lithography, demonstrating the potential of the concept. Furthermore, it was possible to pattern 26 nm diameter pillars on a 60 nm pitch with dose of 221µC/cm 2 with a line edge roughness of 2.3 nm.

show abstract

Methods of controlling cross-linking in negative-tone resists

Cited by 12 publications

References 15 publications

Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography

Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography

Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography

Multi-trigger resist for electron beam lithography

Contact Info

Product

Resources

About