Methods of High-Energy Chemistry in the Technology of Wide-Gap Chalcogenide Semiconductors

Georgobiani, A. N.; Kotlyarevsky, M. B.; Rogozin, I. V.

doi:10.1023/b:inma.0000036325.88593.d7

Cited by 15 publications

(3 citation statements)

References 30 publications

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“…The presence of peaks at 133.0 and 133.5 eV in n ZnO:P can be accounted for by the following defect for mation mechanism: As shown by Georgobiani et al [11], annealing leads to the growth of surface layers on a crystalline host. In this process, one component (oxy gen) comes from the gas phase and zinc atoms diffuse to the surface from the substrate bulk and growing ZnO layer.…”

Section: Resultsmentioning

confidence: 99%

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Properties of epitaxial ZnO:P films

et al. 2013

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Epitaxial ZnO:P films have been produced by annealing ZnP 2 substrates in atomic oxygen and characterized by X ray diffraction, atomic force microscopy, Hall effect measurements, X ray photoelectron spectroscopy, and photoluminescence measurements. The X ray diffraction patterns of the films showed the 002 peak, indicating that their c axis was normal to the substrate surface. According to the Hall effect data, the layers were p type, with a resistivity of ~20 Ω cm, hole mobility of ~9 cm 2 /(V s), and hole concentration of ~7.8 × 10 17 cm -3 . The photoluminescence spectra of the ZnO:P films showed a peak at 3.356 eV (neutral acceptor bound exciton). Our results indicate that the ZnO:P films contain the P Zn -2V Zn defect complex as a shallow acceptor responsible for their p type conductivity.

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Section: Resultsmentioning

confidence: 99%

“…EXPERIMENTAL ZnO:P films were grown at temperatures from 400 to 800°C by radical beam gettering epitaxy [11]. As sub strates, we used tetragonal (red) zinc diphosphide (ZnP 2 ) single crystals (E g ~ 2.05 eV).…”

Section: Introductionmentioning

confidence: 99%

Properties of epitaxial ZnO:P films

et al. 2013

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“…Thin undoped and N-doped ZnO films were obtained using the original method of radical beam gettering epitaxy at the temperature of 500 to 700 ºС [15,16]. The essence of the method consists in the thermal annealing of ZnSe substrate in atomic (radicals) oxygen.…”

Section: Methodsmentioning

confidence: 99%

Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy

Rogozin¹

2006

Semicond. phys. quantum electron. optoelectron.

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Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen orientation of the films along caxis. In the spectrum of low-temperature photoluminescence of N-doped ZnO films, observed was a peak 3.31 eV probably of a neutral acceptor-bound exciton N O. The nature of donor-acceptor band 3.23 eV and green band 2.56 eV was discussed.

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Intrinsic defects in ZnO and GaN crystals

Rogozin

Marakhovskii

2005

J Appl Spectrosc

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The kinetics of defect formation in the system of a crystal with a nonmetal component in the activated gas phase has been investigated. The data obtained has made it possible to develop physicochemical methods of regulating the defect-formation processes depending on the adsorption-desorption-crystallization equilibrium on the surface of a crystal. A kinetic model of defect formation in the A II B VI and A III B V compounds is proposed. Results of the kinetic analysis of the intrinsic defects in the ZnO and GaN compounds are presented. The photoluminescence spectra of GaN films annealed in a flow of nonmetal-component radicals (atoms) have been considered.Introduction. Broad-band semiconductor compounds belonging to the A II B VI and A III B V groups have been intensively investigated in recent years. These investigations were carried out, first of all, with the goal of developing effective light sources, including stimulated-radiation sources operating in the short-wave visible range. The most promising material among the A II B VI compounds is ZnSe (E g = 2.7 eV). It was reported in some works [1-3] that there are laser diodes based on ZnSe, operating to advantage in the blue-green range, that have been developed. Great hopes are also pinned on ZnO (E g = 3.46 eV), because this material shows an effective exciton luminescence in the near-ultraviolet region of the spectrum and possesses an exciton binding energy of up to 60 meV, which makes it possible to obtain a stimulated radiation at high temperatures. In [4,5], light-emitting diodes based on ZnO were developed. The production of high-quality gallium nitride films of n-type and p-type conduction had made it possible to develop effective light-emitting diodes and semiconductor lasers operating in the blue region of the spectrum [6,7].The synthesis of crystals with a definite composition of intrinsic defects is a complex technological problem. The intrinsic atomic defects substantially influence the optical and electrical properties of the A II B VI and A III B V compounds -radiation spectra and type of conduction. The intrinsic defects in doped semiconductors determine the solubility of an impurity, the structure of the impurity centers, and the mechanism of conduction compensation. In this connection, it is important to develop methods of postgrowth treatment that would allow one to control the deviation from the stoichiometry of these compounds.We have developed a technology of thermal treatment of A II B VI (A III B V ) compounds in nonmetal-component radicals (atoms), called the gettering radical-beam epitaxy [8]. The possibility of conduction-type inversion has been demonstrated with the example of ZnS (ZnSe, ZnO).In the present work, the kinetics of defect formation in the system of a crystal with a nonmetal component in the activated gas phase is considered and results of the kinetic analysis of an ensemble of intrinsic point defects in ZnO and GaN are given.Experimental. The thermodynamic and kinetic factors responsible for the tendency of the A II B ...

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Methods of High-Energy Chemistry in the Technology of Wide-Gap Chalcogenide Semiconductors

Cited by 15 publications

References 30 publications

Properties of epitaxial ZnO:P films

Properties of epitaxial ZnO:P films

Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy

Intrinsic defects in ZnO and GaN crystals

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