“…17 Unfortunately, ZnIn 2 S 4 also suffers from the quick recombination of charge carriers and photocorrosion, resulting in non-durable activity. 18–20 A variety of strategies have been employed to solve the above problems, such as morphology control, 21,22 element doping, 23,24 construction of heterojunctions, 25,26 etc . Gao et al prepared a NiWO 4 /ZnIn 2 S 4 p–n heterojunction using a physical solvent evaporation method with a H 2 production rate of 30.51 mmol g −1 h −1 , which is 4.42 times that of pure ZnIn 2 S 4 .…”