Metrological accuracy of the electron pump

Martinis, John M.; Nahum, M.; Jensen, Hans D.

doi:10.1103/physrevlett.72.904

Cited by 152 publications

(140 citation statements)

References 13 publications

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“…The average hold times of two equally populated neighboring charge states were registered to be at the level of τ ≈ 20 s, in the high-E C energy sample 1, and τ ≈ 2.6 s, in the moderate-E C sample 2. These values are remarkable, because such long hold times have been previously observed only for single-electron arrays without resistors with the number of junctions N 4 (see [24]- [26]). …”

Section: Resultsmentioning

confidence: 72%

Single-charge escape processes through a hybrid turnstile in a dissipative environment

et al. 2011

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Abstract. We have investigated the static, charge-trapping properties of a hybrid superconductor-normal metal electron turnstile embedded in a highohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducting trapping island on the other side. The electron hold times, τ ∼ 2-20 s, in our two-junction circuit are comparable with those of typical multi-junction, N 4, normal-metal single-electron tunneling devices. A semi-phenomenological model of the environmental activation of tunneling is applied for the analysis of the switching statistics. The experimental results are promising for electrical metrology applications.

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Section: Resultsmentioning

confidence: 72%

Single-charge escape processes through a hybrid turnstile in a dissipative environment

et al. 2011

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“…This corresponds to a change of about 250 µV in the voltage drop across the pump device, which is expected to significantly increase single-electron transfer errors, according to the data reported by NIST on 7-junction single-electron pumps [19]. [16] [20], which was here apparently slightly mistuned, thus over-compensating the undesired, inevitable cross-polarization from the pump gates to the neighbouring pump islands.…”

Section: Single-electron Tunnelling Devices: Layout and Performancementioning

confidence: 82%

Electron Counting Capacitance Standard with an improved five-junctionR-pump

et al. 2011

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The Electron Counting Capacitance Standard currently pursued at PTB aims to close the Quantum Metrological Triangle with a final precision of a few parts in 10 7 . This paper reports the considerable progress recently achieved with a new generation of single-electron tunnelling devices. A five-junction R-pump was operated with a relative charge transfer error of five electrons in 10 7 , and was used to successfully perform single-electron charging of a cryogenic capacitor. The preliminary result for the single-electron charge quantum has an uncertainty of less than two parts in 10 6 and is consistent with the value of the elementary charge.

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“…They can be used as devices which rely on the discreteness of the electron charge, for example highly sensitive electrometers [2][3][4][5], or single electron pumps as a possible current standard [6]. Furthermore, SETs defined in a two-dimensional electron gas (2DEG) of a semiconductor heterostructure are also known as "quantum dots", and can be seen as tunable artificial atoms with interacting electrons.…”

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confidence: 99%

In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

Lüscher

Fuhrer

Held

et al. 1999

Applied Physics Letters

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A single-electron transistor has been realized in a Ga [Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the contacts of the dot to source and drain. Both the number of electrons in the dot as well as its coupling to the leads can be tuned with an additional, homogeneous top gate electrode. Pronounced Coulomb blockade oscillations are observed as a function of voltages applied to different gates. We find that, for positive top-gate voltages, the lithographic pattern is transferred with high accuracy to the electron gas. Furthermore, the dot shape does not change significantly when in-plane voltages are tuned.

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Metrological accuracy of the electron pump

Cited by 152 publications

References 13 publications

Single-charge escape processes through a hybrid turnstile in a dissipative environment

Single-charge escape processes through a hybrid turnstile in a dissipative environment

Electron Counting Capacitance Standard with an improved five-junctionR-pump

In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

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