As a consequence of the redefinition of the International System of Units (SI) where units are defined in terms of fundamental physical constants, memristive devices represent a promising platform for quantum metrology. Coupling ionics with electronics, memristive devices can exhibit conductance levels quantized in multiples of the fundamental quantum of conductance G0=2e 2 /h. Since the fundamental quantum of conductance G0 is related only on physical constants that assume a fixed value in the revised SI, memristive devices can be exploited for the practical realization of a quantum-based resistance standard. Differently from quantum-Hall effect devices conventionally adopted for the realization of a resistance standard whose working principles requires cryogenic temperatures and/or high magnetic fields, memristive devices can operate in air at room temperature without the need of an applied magnetic field. In memristive devices, quantized conductance effects are related to ionic processes at the nanoscale that regulate the resistive switching mechanism underlaying memristive behaviour. Thanks to the high operational speed, high scalability down to the nanometer scale and CMOS compatibility, memristive devices allows on-chip implementation of a resistance standard required for the Received: ((will be filled in by the editorial staff))Revised: ((will be filled in by the editorial staff))