MeV backscattering analysis of annealing behaviors of ion-implanted arsenic in silicon

Inada, T.; Miyakawa, Hideaki; Ohfuji, Takeshi; Benzaki, K.; Onoda, Hiroshi; Yuge, Yoji; Ushio, Shintaro

doi:10.1016/0167-5087(83)91052-9

Nuclear Instruments and Methods in Physics Research

1983

DOI: 10.1016/0167-5087(83)91052-9

|View full text |Cite

MeV backscattering analysis of annealing behaviors of ion-implanted arsenic in silicon

T. Inada

Hideaki Miyakawa

Takeshi Ohfuji

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1985

2007

Publication Types

Select...

Article5

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 6 publications

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

MeV backscattering analysis of annealing behaviors of ion-implanted arsenic in silicon

Cited by 6 publications

References 3 publications

Analysis by absorption and scattering of radiation

Analysis by absorption and scattering of radiation

Rutherford backscattering measurements of dopant concentration in Cd-implanted gallium arsenide

Characterization of n-type layers formed in (11–20)-4H–SiC by phosphorus ion implantation

Contact Info

Product

Resources

About