MeV carbon ion irradiation-induced changes in the electrical conductivity of silver nanowire networks

Bari, Bushra; Honey, Shehla; Madhuku, M.; Ahmad, Ishaq; Khan, Rauf; Muhammad, Arshad; Alamgir, Khalid; Naseem, Shahzad; Maaza, M.

doi:10.1016/j.cap.2015.02.023

Cited by 33 publications

(11 citation statements)

References 24 publications

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“…Schematic mechanism of the coalescence process is presented in Figure 5 where the process is started from necking to joining of Cu-NWs when subjected to medium -fluence and finally to complete coalescence of two NWs at high -fluence, forming single NWs with double diameter. Recently, coalescence of silver nanowires by carbon ion beam irradiation has been reported and formed X-, Y-, and II-shaped molecular junctions [16]. Formation of X-, Y-, V-, and II-shaped junctions is also confirmed from HRTEM images in Figure 6 (indicated by arrows).…”

Section: Resultsmentioning

confidence: 56%

“…However, networks for solar cells. The welding of Ag-NWs has matured for fabrication of transparent electrodes for solar cells [16] while work on welded networks of Cu-NWs as a transparent electrode still needs to be explored. Our new approach to get welded conducting networks of Cu-NWs will be useful for solar cell designers and integration of nanodevices.…”

Section: Resultsmentioning

confidence: 99%

“…Considerable effort has been made to study radiation hardness of nanodevices and solar cells [12][13][14][15]. Recently, it was shown that MeV carbon ions irradiations on silver NWs (Ag-NWs) induce significant damage on their structure while on the contrary they are stable under MeV proton beams [16,17]. Cu-NWs are potential future integrated electronic components in nanodevices which require hardness tolerance testing.…”

Section: Introductionmentioning

confidence: 99%

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γ-Rays Irradiation Induced Structural and Morphological Changes in Copper Nanowires

Honey

Thema

Ahmad

et al. 2016

Journal of Nanomaterials

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This contribution reports on the effect ofγ-irradiations on the structural and morphological properties of copper nanowires (Cu-NWs) within theγdoses varying from 6 to 25 kGy. At 9 kGy, the Cu-NWs started welding, forming perfect X-, V-, II-, and Y-shaped molecular junctions. Further increasing theγdose up to 15 kGy caused the Cu-NWs to fuse and form larger diameter NWs. At the highest dose of 25 kGy, the nanowires converted into a continuous Cu thin film. However, X-ray diffraction (XRD) results showed that the structure of the Cu-NWs remained stable even after converting into a thin film. The formation of the Cuprite (Cu2O) phases was observed at higherγdose. The mechanism of forming welded networks of Cu-NWs and Cu thin films is explained via the short and high energyγ-ray wavelengths which act on Cu-Cu molecular covalent bonds isotropically.

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Section: Resultsmentioning

confidence: 56%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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γ-Rays Irradiation Induced Structural and Morphological Changes in Copper Nanowires

Honey

Thema

Ahmad

et al. 2016

Journal of Nanomaterials

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“…In TEM results (see in figure 1), Ni-NWs with reduced diameters after Ar ± ions beam irradiation are confirming that atoms are sputtered /ejected from surface of Ni-NWs due to collision cascade effect. Similarly, XRD spectra in figure 3(a) are showing the reduction in intensities of XRD peaks after Ar ± ions beam irradiation which is the indication of existence of defects due to collision cascade effect [18,31,32]. The relative conductivity of Ni-NWs network is decreased to a relative value of 0.5 at a dose ∼7×10 14 ions cm −2 .…”

Section: Resultsmentioning

confidence: 78%

“…Upon increasing beam fluence of Ar + ions upto 3×10 15 ions cm −2 , the electrical conductivity of Ni-NWs meshes is further decreased. This decrease is might be due to sputtered atoms of Ni agglomerated in form of amorphous regions [18,31]. In TEM results (see in figure 1), Ni-NWs with reduced diameters after Ar ± ions beam irradiation are confirming that atoms are sputtered /ejected from surface of Ni-NWs due to collision cascade effect.…”

Section: Resultsmentioning

confidence: 80%

Modification in properties of Ni-NWs meshes by Ar⁺ ions beam irradiation

Honey

Asim

Ahmad

et al. 2020

Mater. Res. Express

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Influence of 30 kilo-electron-volt (keV) Argon (Ar + ) ions on optical and electrical properties of nickel nanowires (Ni-NWs) meshes is being reported. Ni-NWs are being exposed to 30 keV Argon (Ar + ) ions at various beam fluencies. These fluencies of Ar + ions are 7×10 14 ions cm −2 , 3×10 15 ions cm −2 and 3×10 16 ions cm −2 . After irradiation, Ni-NWs meshes were analyzed through transmission electron microscopy technique (TEM). The structural analysis has been done through X-ray diffraction technique. It is found from TEM results that atoms are sputtered out from surfaces of Ni-NWs due to collision cascade effect persistently and lead to reduce the diameters or thicknesses of Ni-NWs. X-ray diffraction results reveal that crystalline quality is reduced under Ar + ions irradiation which may be due to defects induced in Ni-NWs as a result of collision cascade effect. The Ni-NWs meshes are characterized optically and electrically through UV-VIS spectroscopy and four probe techniques. The optical transparencies of Ni-NWs meshes are increasing with increase in beam fluence of Ar + ions. The electrical conductivity of the mesh is decreased continuously with increment in beam fluence of Ar + ions which might be due to production of defects in Ni-NWs. The tuning of optical transparency and electrical conductivity of Ni-NWs meshes is required for their application as successful transparent electrodes in optoelectronic nanodevices.

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Printing Conductive Nanomaterials for Flexible and Stretchable Electronics: A Review of Materials, Processes, and Applications

Huang

Zhu

2019

Adv Materials Technologies

360

347

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PE has been explored for the manufacturing of flexible and stretchable electronic devices by printing functional inks containing soluble or dispersed materials, [14][15][16] which has enabled a wide variety of applications, such as transparent conductive films (TCFs), flexible energy harvesting and storage, thin film transistors (TFTs), electroluminescent devices, and wearable sensors. [17][18][19][20][21][22][23][24] The global PE market should reach $26.6 billion by 2022 from $14.0 billion in 2017 at a compound annual growth rate of 13.6%. [25] PE devices are manufactured by a variety of printing technologies. Typical printing technologies can be divided into two broad categories: noncontact patterning (or nozzle-based patterning) and contact-based patterning. The noncontact techniques include inkjet printing, electrohydrodynamic (EHD) printing, aerosol jet printing, and slot die coating, while screen printing, gravure printing, and flexographic printing are examples of the contact techniques. Each of these techniques has its own advantages and disadvantages, but they all rely on the principle of transferring inks to a substrate. Understanding the characteristics and recent advances of each printing technique is important to further the progress in PE. Moreover, to promote the lab-scale printing technologies to large-scale production process, roll-toroll (R2R) printing, which is one of the manufacturing methods to obtain large-area films with low cost and excellent durability, has drawn much attention from both industry and the research community.Nearly all of devices based on PE require conductive structures, interconnects, and contacts; therefore, highly conductive patterns, usually with high transparency and/or high resolution, fabricated by means of printing conductive materials are one of the most critical components in PE devices. Various printable conductive nanomaterials, such as metal nanomaterials (e.g., metal nanoparticles and metal nanowires) and carbon nanomaterials (e.g., graphene and carbon nanotubes (CNTs)), have been explored and used as major materials for PE. Applying printing technology to deposition of the conductive nanomaterials requires formulation of suitable inks. After depositing inks on different substrates, post-printing treatment, Printed electronics is attracting a great deal of attention in both research and commercialization as it enables fabrication of large-scale, low-cost electronic devices on a variety of substrates. Printed electronics plays a critical role infacilitating widespread flexible electronics and more recently stretchable electronics. Conductive nanomaterials, such as metal nanoparticles and nanowires, carbon nanotubes, and graphene, are promising building blocks for printed electronics. Nanomaterial-based printing technologies, formulation of printable inks, post-printing treatment, and integration of functional devices have progressed substantially in the recent years. This review summarizes basic principles and recent development of common printing technologie...

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MeV carbon ion irradiation-induced changes in the electrical conductivity of silver nanowire networks

Cited by 33 publications

References 24 publications

γ-Rays Irradiation Induced Structural and Morphological Changes in Copper Nanowires

γ-Rays Irradiation Induced Structural and Morphological Changes in Copper Nanowires

Modification in properties of Ni-NWs meshes by Ar⁺ ions beam irradiation

Printing Conductive Nanomaterials for Flexible and Stretchable Electronics: A Review of Materials, Processes, and Applications

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MeV carbon ion irradiation-induced changes in the electrical conductivity of silver nanowire networks

Cited by 33 publications

References 24 publications

γ-Rays Irradiation Induced Structural and Morphological Changes in Copper Nanowires

γ-Rays Irradiation Induced Structural and Morphological Changes in Copper Nanowires

Modification in properties of Ni-NWs meshes by Ar+ ions beam irradiation

Printing Conductive Nanomaterials for Flexible and Stretchable Electronics: A Review of Materials, Processes, and Applications

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Modification in properties of Ni-NWs meshes by Ar⁺ ions beam irradiation