MeV P ion implantation damage and rapid thermal annealing effects in Fe-doped InP using Raman scattering

Abstract

The damage in Fe-doped InP induced by 1.0 MeV P ion implantation with doses ranging from 5×1013 to 2×1015 cm−2 and effects of rapid thermal annealing (RTA) in the range of 700-1050 °C were investigated by means of Raman scattering. The shift and asymmetrical broadening of the longitudinal optical phonon peak (LO) and the appearance of a transverse optical mode (TO) show that the Raman scattering is very sensitive to implantation damage. For doses larger than 5×1014 cm−2, the TO and LO peaks were markedly broadened, even merged into a single peak, indicating an amorphous structure in the near surface region. Much of the primary damage can be annealed out after RTA at 800 °C for all implantation doses. For RTA below 900 °C, the residual damage decreased with increasing annealing temperature for the low dose case of 1×1014 cm−2, but increased for the high dose case of 2×1015 cm−2. Only when the annealing temperature is over 900 °C, the residual defects of the high dose case drastically decrease, and nearly full recovery is obtained when the annealing temperature is raised to 1000–1050 °C.

Formation of nanodots on oblique ion sputtered InP surfaces

“…The spatial and spectral resolutions of the Raman setup were about 1.0 mm and 0.2 cm À1 , respectively. The Raman probing depths 1/2a, where a denotes the absorption coefficient, for Ar-ion laser of wavelength of 514.5 nm are around 50 nm and 18 nm in crystalline and amorphous phases of InP, respectively [19,20]. The projected range of Ar + -ions in InP, calculated by SRIM-2006, is about 84 nm [21].…”

Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing

“…13 Defects and lattice stress produced by ion implantation can be effectively removed by thermal annealing, at the same time this provides an electrical activation of the implanted impurities. 14,15 Taking into account possible device applications 16 of porous semiconductor structures, the impact of processing, e.g., ion implantation and rapid thermal annealing ͑RTA͒, has to be investigated. Raman spectroscopy represents a powerful technique for obtaining microscopic information about the state of semiconductor material subjected to ion implantation and annealing.…”

Nanostructuring of InP Surface by Low-Energy Ion Beam Irradiation

“…The penetration depth of the 514.5 nm Argon-ion laser line is 50 nm in crystalline InP and 18 nm in amorphous InP, and depends upon the degree of disorder. [14][15][16] These are the upper and lower limit of probing depth for 514.5 nm laser line depending on degree of disorder of InP. More the damage or amorphicity in the InP surface, the lesser would be the penetration depth.…”

“…The Raman probing depth defined as 1/2 , where denotes the absorption co-efficient, is 50 nm in crystalline InP and 18 nm in amorphous InP. [14][15][16] The implantation depths of Ar + -ions in InP for the beam energy of 50 and 100 keV, calculated by SRIM-2003, are about 44 and 84 nm, respectively, with longitudinal and lateral straggling around 28 and 20 nm for 50 keV, and 48 and 36 nm for 100 keV. Figure 1 shows scanning electron microscopy (SEM) images of the nanopatterned InP surfaces synthesized by Ar + -ion irradiation of energy 50 keV and 100 keV with an ion dose 1 × 10 18 cm −2 at normal incidence, and subjected to rapid thermal annealing in N 2 ambient for 1 min.…”

“…Several authors have used Raman spectroscopy to study the damage and disorder in semiconductors induced by ion implantation. [8][9][10][11][12][13][14] Peercy et al 8 reported downward shift and broadening of the phonon modes produced by lattice strain in Xe-ion implanted GaAs by Raman scattering. Bedel et al 10 reported disorder induced scattering and second-order optical scattering to study the structural damage of the Zn-implanted InP.…”