The radiation-induced amorphization of U 3 Si 2 was investigated by in-situ transmission electron microscopy using 1 MeV Kr ion irradiation. Both arc-melted and sintered U 3 Si 2 specimens were irradiated at room temperature to confirm the similarity in their responses to radiation. The sintered specimens were then irradiated at 350 • C and 550 • C up to 7.2×10 15 ions/cm 2 to examine their amorphization behavior under light water reactor (LWR) conditions. U 3 Si 2 remains crystalline under irradiation at LWR temperatures. Oxidation of the material was observed at high irradiation doses.