2014 20th International Conference on Ion Implantation Technology (IIT) 2014
DOI: 10.1109/iit.2014.6940059
|View full text |Cite
|
Sign up to set email alerts
|

MeV-proton channeling in crystalline silicon

Abstract: Hydrogen implantation has become an important application in the fabrication of power semiconductor devices. With the product requirement of a well-defined implantation profile, adequate control of the incident beam angle is necessary in order to avoid channeling effects. With respect to the different scan systems of commercial implanters and the crystal alignment of the bulk material the implant tilt and twist angles have to be adapted. We used commercially available <100>-oriented silicon wafers to examine p… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2018
2018
2018
2018

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
references
References 6 publications
0
0
0
Order By: Relevance