Meyer–Neldel rule for dark current in charge-coupled devices

Widenhorn, Ralf; Mündermann, Lars; Rest, A.; Bodegom, Erik

doi:10.1063/1.1372365

Cited by 38 publications

(34 citation statements)

References 24 publications

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“…Unfortunately the paper does not present data for other barrier energies, so it is not possible to find the Tmn associated with the transversal conduction he obtained. Widenhorn et al [29] calculated the MNR for the dark current in a silicon CCD and found a MN energy of 25meV, which is very close to our result.…”

Section: Iv-discussionsupporting

confidence: 81%

Meyer Neldel rule application to silicon supersaturated with transition metals

García-Hemme

García-Hernansanz

Olea

et al. 2015

J. Phys. D: Appl. Phys.

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This paper presents the results for the transverse conductance across a bilayer formed by supersaturating with diverse transition metals a thin layer of a silicon wafer. The layer is formed by ion implantation and annealed by pulsed laser melting. The transverse conductance is exponentially activated, obtaining values ranging from 0.018 to 0.7 eV for the activation energy and pre-exponential factors of 10 -2 -10 12 S depending on the annealing energy density. A semi-logarithmic plot of the pre-exponential factor versus activation energy shows an almost perfect linear behavior as stated by the Meyer Neldel rule. The Meyer Neldel energy obtained for implantation with different transition metals and also annealed in different conditions is 22meV, which is within the range of silicon phonons, thus confirming the hypothesis of the Multi Excitation Entropy theory.

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Section: Iv-discussionsupporting

confidence: 81%

Meyer Neldel rule application to silicon supersaturated with transition metals

García-Hemme

García-Hernansanz

Olea

et al. 2015

J. Phys. D: Appl. Phys.

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“…Other important characteristics of dark current, such as the temperature dependence 14,15 and random telegraph behavior 16,17 , are also begging for better characterization and simulation models. This presents a fruitful avenue for future research.…”

Section: Discussionmentioning

confidence: 99%

A model for dark current characterization and simulation

Baer

2006

SPIE Proceedings

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The Poisson and Normal probability distributions poorly match the dark current histogram of a typical image sensor. The histogram has only positive values, and is positively skewed (with a long tail). The Normal distribution is symmetric (and possesses negative values), while the Poisson distribution is discrete. Image sensor characterization and simulation would benefit from a different distribution function, which matches the experimental observations better.Dark current fixed pattern noise is caused by discrete randomly-distributed charge generation centers. If these centers shared a common charge-generation rate, and were distributed uniformly, the Poisson distribution would result. The fact that it does not indicates that the generation rates vary, a spatially non-uniform amplification is applied to the centers, or that the spatial distribution of centers is non-uniform. Monte Carlo simulations have been used to examine these hypotheses.The Log-Normal, Gamma and Inverse Gamma distributions have been evaluated as empirical models for characterization and simulation. These models can accurately match the histograms of specific image sensors. They can also be used to synthesize the dark current images required in the development of image processing algorithms. Simulation methods can be used to create synthetic images with more complicated distributions.

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“…13 Widenhorn et al calculated the MN rule for the dark current in a silicon CCD and found an energy value of 25.3 meV. 14 The same authors reported an energy value of 56.5 meV for forward current in diodes. 15 Coutts and Pearsall found 31 meV for the reverse current of solar cells.…”

Section: -2mentioning

confidence: 99%

Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

Perez

Castán

García

et al. 2015

Applied Physics Letters

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In the attempt to form an intermediate band in the bandgap of silicon substrates to give it the capability to absorb infrared radiation, we studied the deep levels in supersaturated silicon with titanium. The technique used to characterize the energy levels was the thermal admittance spectroscopy. Our experimental results showed that in samples with titanium concentration just under Mott limit there was a relationship among the activation energy value and the capture cross section value. This relationship obeys to the well known Meyer-Neldel rule, which typically appears in processes involving multiple excitations, like carrier capture/emission in deep levels, and it is generally observed in disordered systems. The obtained characteristic Meyer-Neldel parameters were Tmn = 176 K and kTmn = 15 meV. The energy value could be associated to the typical energy of the phonons in the substrate. The almost perfect adjust of all experimental data to the same straight line provides further evidence of the validity of the Meyer Neldel rule, and may contribute to obtain a deeper insight on the ultimate meaning of this phenomenon.

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Meyer–Neldel rule for dark current in charge-coupled devices

Cited by 38 publications

References 24 publications

Meyer Neldel rule application to silicon supersaturated with transition metals

Meyer Neldel rule application to silicon supersaturated with transition metals

A model for dark current characterization and simulation

Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

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