Mg-doped beta-Ga2O3 films deposited by plasma-enhanced atomic layer deposition system for metal-semiconductor-metal ultraviolet C photodetectors

Chu, Shao‐Yu; Yeh, Tsung-Han; Lee, Ching-Ting; Lee, Hsin-Ying

doi:10.1016/j.mssp.2022.106471

Cited by 28 publications

(9 citation statements)

References 43 publications

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“…As shown in Figure 7 , the activation energy of 248 meV, 214 meV, and 211 meV corresponded to the NO 2 gas sensors with Ga 2 O 3 nanorod sensing membranes annealed at 300 °C, 400 °C, and 500 °C, respectively. In general, the activation energy was inversely proportional to the carrier concentration [ 31 , 32 ], which was also increased with the amounts of oxygen vacancies in the Ga 2 O 3 material [ 33 ]. According to the XPS results, the oxygen vacancies residing on the surfaces of Ga 2 O 3 nanorods were effectively increased during the annealing treatment process.…”

Section: Resultsmentioning

confidence: 99%

Investigation of High-Sensitivity NO2 Gas Sensors with Ga2O3 Nanorod Sensing Membrane Grown by Hydrothermal Synthesis Method

Chu

Yeh

et al. 2023

Nanomaterials

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In this work, Ga2O3 nanorods were converted from GaOOH nanorods grown using the hydrothermal synthesis method as the sensing membranes of NO2 gas sensors. Since a sensing membrane with a high surface-to-volume ratio is a very important issue for gas sensors, the thickness of the seed layer and the concentrations of the hydrothermal precursor gallium nitrate nonahydrate (Ga(NO3)3·9H2O) and hexamethylenetetramine (HMT) were optimized to achieve a high surface-to-volume ratio in the GaOOH nanorods. The results showed that the largest surface-to-volume ratio of the GaOOH nanorods could be obtained using the 50-nm-thick SnO2 seed layer and the Ga(NO3)3·9H2O/HMT concentration of 12 mM/10 mM. In addition, the GaOOH nanorods were converted to Ga2O3 nanorods by thermal annealing in a pure N2 ambient atmosphere for 2 h at various temperatures of 300 °C, 400 °C, and 500 °C, respectively. Compared with the Ga2O3 nanorod sensing membranes annealed at 300 °C and 500 °C, the NO2 gas sensors using the 400 °C-annealed Ga2O3 nanorod sensing membrane exhibited optimal responsivity of 1184.6%, a response time of 63.6 s, and a recovery time of 135.7 s at a NO2 concentration of 10 ppm. The low NO2 concentration of 100 ppb could be detected by the Ga2O3 nanorod-structured NO2 gas sensors and the achieved responsivity was 34.2%.

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Section: Resultsmentioning

confidence: 99%

Investigation of High-Sensitivity NO2 Gas Sensors with Ga2O3 Nanorod Sensing Membrane Grown by Hydrothermal Synthesis Method

Chu

Yeh

et al. 2023

Nanomaterials

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“…Figure 6(a) benchmarks the responsivity (R) versus the specific detectivity (D * ) of the reported Ga 2 O 3 photodetectors with different configurations, including MSM [5,[27][28][29][30][31][32], Schottky diodes [33][34][35][36], heterostructures [22,[37][38][39][40][41] and phototransistors [42][43][44][45]. In general, the detectivity increases with the elevated responsivity and the suppressed noises, and thus, high photocurrents and low dark currents are desirable for achieving high detectivity.…”

Section: Resultsmentioning

confidence: 99%

Photoconductive and photovoltaic metal-semiconductor-metal κ-Ga₂O₃ solar-blind detectors with high rejection ratios

Cui¹,

Xu²,

Sun³

et al. 2022

J. Phys. D: Appl. Phys.

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The metal-semiconductor-metal (MSM) structure is a popular architecture for developing Ga2O3 solar-blind photodetectors. The nature of metal-semiconductor contact is decisive for the operation mode, gain mechanism, and device performances. In this contribution, κ-Ga2O3 MSM solar-blind photodetectors with Ti/Ga2O3 Ohmic and Ni/Ga2O3 Schottky contacts were constructed on the high-quality Si-doped κ-Ga2O3 epilayer grown by hydride vapor phase epitaxy. The Ti/κ-Ga2O3/Ti Ohmic MSM device is operated in a photoconductive mode, exhibiting a maximum responsivity of 322.5 A/W and a high rejection ratio of over 105, but with an undesirable sub-gap response and high dark current. In comparison, the Ni/Ga2O3/Ni photodiode with a back-to-back Schottky configuration is operated in a mixed photovoltaic and photoconductive mode, demonstrating a decent photoresponsivity of 0.37 A/W, a maintained high rejection ratio of 1.16×105, a detectivity of 3.51×1013 Jones and the elimination of slow photoresponse from sub-gap states. The frequency-dependent photoresponse and transient photocurrent characteristics indicate that the persistent photoconductivity effect is responsible for the high gain achieved in the Ti/Ga2O3/Ti photoconductor, and the dominant slow transient decay component is a fingerprint of photoexcited carrier trapping and repopulation. The response speed is improved in the Ni/Ga2O3/Ni Schottky MSM device, whereas carrier transport across interdigitated fingers is affected by bulk traps, limiting the overall response-bandwidth merit.

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“…In 2018, a six-inch β-Ga 2 O 3 was attained by EFG. 27 Therefore, Schottky barrier diode (SBD) 28 and solar-blind ultraviolet (UV) 29,30 photodetectors and other devices are developing rapidly.…”

Section: Introductionmentioning

confidence: 99%

Effect of high-temperature remelting on the properties of Sn-doped β-Ga₂O₃ crystal grown using the EFG method

Jian

Sai

et al. 2023

CrystEngComm

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Mg-doped beta-Ga2O3 films deposited by plasma-enhanced atomic layer deposition system for metal-semiconductor-metal ultraviolet C photodetectors

Cited by 28 publications

References 43 publications

Investigation of High-Sensitivity NO2 Gas Sensors with Ga2O3 Nanorod Sensing Membrane Grown by Hydrothermal Synthesis Method

Investigation of High-Sensitivity NO2 Gas Sensors with Ga2O3 Nanorod Sensing Membrane Grown by Hydrothermal Synthesis Method

Photoconductive and photovoltaic metal-semiconductor-metal κ-Ga₂O₃ solar-blind detectors with high rejection ratios

Effect of high-temperature remelting on the properties of Sn-doped β-Ga₂O₃ crystal grown using the EFG method

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Mg-doped beta-Ga2O3 films deposited by plasma-enhanced atomic layer deposition system for metal-semiconductor-metal ultraviolet C photodetectors

Cited by 28 publications

References 43 publications

Investigation of High-Sensitivity NO2 Gas Sensors with Ga2O3 Nanorod Sensing Membrane Grown by Hydrothermal Synthesis Method

Investigation of High-Sensitivity NO2 Gas Sensors with Ga2O3 Nanorod Sensing Membrane Grown by Hydrothermal Synthesis Method

Photoconductive and photovoltaic metal-semiconductor-metal κ-Ga2O3 solar-blind detectors with high rejection ratios

Effect of high-temperature remelting on the properties of Sn-doped β-Ga2O3 crystal grown using the EFG method

Contact Info

Product

Resources

About

Photoconductive and photovoltaic metal-semiconductor-metal κ-Ga₂O₃ solar-blind detectors with high rejection ratios

Effect of high-temperature remelting on the properties of Sn-doped β-Ga₂O₃ crystal grown using the EFG method