MgB2 superconducting thin films sequentially fabricated using DC magnetron sputtering and thermionic vacuum arc method

Okur, Salih; Kalkancı, M.; Pat, Şuat; Ekem, N.; Akan, Tamer; Balbağ, Zafer; Musa, G.; Tanoğlu, Metin

doi:10.1016/j.physc.2007.07.008

Cited by 13 publications

(14 citation statements)

References 9 publications

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“…TVA is an anodic plasma generator and thin films can also produce. (Okur et al, 2007;Ekem et al, 2008;Balbag and Pat, 2011;Pat et al, 2013Pat et al, , 2014a. InGaAs thin film layers were coated on glass substrates.…”

Section: Methodsmentioning

confidence: 99%

Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method

et al. 2015

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A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the produced layers have been investigated. InGaAs structure is using in electronics and optoelectronics devices. The main advantage of TVA method is its fast deposition rate, without any loss in the quality of the films. Doping is a very simple and fast according to common production methods. InGaAs is an alloy of indium arsenide (InAs) and gallium arsenide (GaAs). InAs with (220) crystallographic direction and GaAs with (024)/(022) crystallographic directions were detected using by XRD analysis. GaAs and InAs are in the cubic and zinc blende crystal system, respectively. According to the transmittance spectra, sample has a broadband transparency in the range of 1000-3300 nm. According to results, defined TVA method for In doping to GaAs is proper fast and friendly method. SCANNING 38:297-302, 2016. © 2015 Wiley Periodicals, Inc.

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Section: Methodsmentioning

confidence: 99%

Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method

et al. 2015

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“…Properties of the boron films deposited by the above-described method were examined in [253]. XPS analysis indicated 68 at.…”

Section: Boron-containing Filmsmentioning

confidence: 99%

“…An attempt to produce the superconducting material MgB 2 was presented in [253]. In this work, a combination of magnetron sputtering and TVA was applied.…”

Section: Boron-containing Filmsmentioning

confidence: 99%

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

et al. 2020

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This review summarizes the more-than-25-years of development of the so-called thermionic vacuum arc (TVA). TVA is an anodic arc discharge in vapors of the material to be deposited; the energy for its melting is delivered by means of a focused electron beam. The resulting material ions fall at the substrate where they form a well-adhesive layer; the ion energy is controllable. The deposited layers are, as a rule, free from droplets typical for cathodic arc deposition systems and the thermal stress of the substrates being coated is low. TVA is especially suitable for processing refractory metals, e.g., carbon or tungsten, however, in the course of time, various useful applications of this system originated. They include layers for fusion application, hard coatings, low-friction coatings, biomedical-applicable films, materials for optoelectronics, and for solid-state batteries. Apart from the diagnostic of the film properties, also the diagnostic of the TVA discharge itself as well as of the by TVA generated plasma was performed. The research and application of the TVA proceeds in broad international collaboration. At present, the TVA technology has found its firm place among the different procedures for thin film deposition.

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“…TVA has many significant advantages compared to deposited thin films such as: (e) adhesiveness; (f) high deposition rate, etc [10][11][12][13][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

“…email: mozkan@aku.edu.tr tungsten, tantalum, and glassy carbon because they do not alloy with deposited materials. The focused (high voltage) thermo-electrons from the electron gun bombard the anode, melting the anode materials which then evaporate in the inter-electrodic space in the vacuum chamber [10][11][12][13][14][15][16][17][18][19][20]. As the accelerator voltage is increased, a bright discharge is established in the inter-electrodic space for carbon materials.…”

Section: Introductionmentioning

confidence: 99%

ZnSe nanocrystalline thin films deposition on Si substrate by thermionic vacuum arc

Özkan

Ekem

Balbağ

et al. 2012

Proceedings of the Institution of Mechanical Engineers, Part L:

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ZnSe nanocrystalline thin films were deposited on Si wafer using thermionic vacuum arc (TVA) method. For the first time, binary semiconductor thin films were deposited by TVA. The microstructure and surface morphology of the ZnSe nanocrystalline thin films were investigated using X-ray diffractometry, scanning electron microscopy, energy-dispersive X-ray spectrometry, and atomic force microscopy (AFM). Grain dimensions and grain size were determined by AFM measurement. Moreover, spectroscopic ellipsometer was used to characterize the refractive indices of ZnSe nanocrystalline thin film. According to experimental measurement, ZnSe nanocrystalline thin film was polycrystalline with (1 1 1), (2 2 0), and (3 1 1) preferred orientations. Refractive indices were approximately 2.50 in all visible ranges. Our results show that nanocrystalline thin films can be deposited with TVA method.

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MgB2 superconducting thin films sequentially fabricated using DC magnetron sputtering and thermionic vacuum arc method

Cited by 13 publications

References 9 publications

Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method

Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method

Thermionic Vacuum Arc—A Versatile Technology for Thin Film Deposition and Its Applications

ZnSe nanocrystalline thin films deposition on Si substrate by thermionic vacuum arc

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