MgO Magnetic Tunnel Junction Electrical Current Sensor With Integrated Ru Thermal Sensor

Lopes, A.; Cardoso, S.; Ferreira, Ricardo; Paz, Elvira; Deepak, Francis Leonard; Sanchez, J.; Ramı́rez, D.; Ravelo, Sergio I.

doi:10.1109/tmag.2013.2246550

Cited by 15 publications

(8 citation statements)

References 9 publications

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“…By connecting the sensors in a bridge configuration, it is possible to reach high sensitivity (tens of mV/V/A) in comparatively wide linear ranges (few mT) [11,12], which can be useful particularly in industrial electronics applications [13]. Additionally, during the fabrication process, sensors can be easily connected in a series, which significantly improves their performance [14].…”

Section: Introductionmentioning

confidence: 99%

Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors

Dąbek

Wiśniowski

Stobiecki

et al. 2016

Sensors

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As single tunneling magnetoresistive (TMR) sensor performance in modern high-speed applications is limited by breakdown voltage and saturation of the sensitivity, for higher voltage applications (i.e., compatible to 1.8 V, 3.3 V or 5 V standards) practically only a series connection can be applied. Thus, in this study we focused on sensitivity, 3 dB bandwidth and sensitivity-bandwidth product (SBP) dependence on the DC bias voltage in single and series-connected TMR sensors. We show that, below breakdown voltage, the strong bias influence on sensitivity and the 3 dB frequency of a single sensor results in higher SBP than in a series connection. However, the sensitivity saturation limits the single sensor SBP which, under 1 V, reaches the same level of 2000 MHz∙V/T as in a series connection. Above the single sensor breakdown voltage, linear sensitivity dependence on the bias and the constant 3 dB bandwidth of the series connection enable increasing its SBP up to nearly 10,000 MHz∙V/T under 5 V. Thus, although by tuning bias voltage it is possible to control the sensitivity-bandwidth product, the choice between the single TMR sensor and the series connection is crucial for the optimal performance in the high frequency range.

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Section: Introductionmentioning

confidence: 99%

Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors

Dąbek

Wiśniowski

Stobiecki

et al. 2016

Sensors

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“… ( a ) Design of the chip with the four magnetic tunnel junction (MTJ) sensors connected in the Wheatstone bridge, several MTJ test elements, and a temperature sensor [ 30 ]; ( b ) Operation schematics, showing the opposite field created at each pair of MTJ elements by the U-shaped test current line. …”

Section: Figurementioning

confidence: 99%

Electronic Energy Meter Based on a Tunnel Magnetoresistive Effect (TMR) Current Sensor

et al. 2017

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In the present work, the design and microfabrication of a tunneling magnetoresistance (TMR) electrical current sensor is presented. After its physical and electrical characterization, a wattmeter is developed to determine the active power delivered to a load from the AC 50/60 Hz mains line. Experimental results are shown up to 1000 W of power load. A relative uncertainty of less than 1.5% with resistive load and less than 1% with capacitive load was obtained. The described application is an example of how TMR sensing technology can play a relevant role in the management and control of electrical energy.

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“…The European Physical Journal Applied Physics Magnetoresistive sensors have been successfully applied to industrial sensing as electrical current sensors in power systems [10,11] or spindle high-speed measurements. Non destructive testing, either for flux leakage detection for packaging control [12] or metal surface cracks scanning [13,14], is another relevant area where MR sensors are used.…”

Section: -P1mentioning

confidence: 99%

“…A wide range of other applications for MR sensors exists, that has been breached by AMR and SV based sensors, but where MTJ based sensors appear when their specifications surpass those of AMR or GMR. These include various types of field sensors (from nT to 1 T fields) used in several electronic and industrial applications [10] along with biosensing systems [15], whose specific requirements will define which of the technologies to use. Key properties such as operational linear range, thermal stability, materials cost, thermal treatments required or electrical robustness against electrostatic discharge need to be evaluated together while selecting the best type of MR technology for a particular application (Fig.…”

Section: Tunnel Magnetoresistancementioning

confidence: 99%

Linearization strategies for high sensitivity magnetoresistive sensors

Silva

Leitao

Valadeiro

et al. 2015

Eur. Phys. J. Appl. Phys.

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102

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Abstract. Ultrasensitive magnetic field sensors envisaged for applications on biomedical imaging require the detection of low-intensity and low-frequency signals. Therefore linear magnetic sensors with enhanced sensitivity low noise levels and improved field detection at low operating frequencies are necessary. Suitable devices can be designed using magnetoresistive sensors, with room temperature operation, adjustable detected field range, CMOS compatibility and cost-effective production. The advent of spintronics set the path to the technological revolution boosted by the storage industry, in particular by the development of read heads using magnetoresistive devices. New multilayered structures were engineered to yield devices with linear output. We present a detailed study of the key factors influencing MR sensor performance (materials, geometries and layout strategies) with focus on different linearization strategies available. Furthermore strategies to improve sensor detection levels are also addressed with best reported values of ∼40 pT/ √ Hz at 30 Hz, representing a step forward the low field detection at room temperature.

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MgO Magnetic Tunnel Junction Electrical Current Sensor With Integrated Ru Thermal Sensor

Cited by 15 publications

References 9 publications

Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors

Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors

Electronic Energy Meter Based on a Tunnel Magnetoresistive Effect (TMR) Current Sensor

Linearization strategies for high sensitivity magnetoresistive sensors

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