MgSiN₂ Addition as a Means of Increasing the Thermal Conductivity of β‐Silicon Nitride

Abstract

tivity over 140 W⅐(m⅐K) ؊1 could be obtained. For both specimens, lattice oxygen content was decreased with sintering time. However, the thermal conductivity of the MgSiN 2 -doped specimen was slightly higher than the MgO-doped specimen with the same oxygen content.

Textured silicon nitride: processing and anisotropic properties

“…In this case, equation (15) is identical to equation (16). Because most Si 3 N 4 ceramics exhibit large values of R, the texture development in hot-forged Si 3 N 4 basically depends on the strain, i.e., the texture development is essentially attributed to the grain rotation mechanism.…”

“…In the literature, there are several major processing methods available reported for controlling abnormal grain growth in Si 3 N 4 ceramics, including (i) seeding with single β-Si 3 N 4 crystal particles [13][14][15], (ii) sintering/annealing at high temperature for a long time [11,12,16,17], (iii) additive composition including composition and amount [16,96,97], (iv) preheating treatment before final sintering [98,99].…”

“…The properties of Si 3 N 4 ceramics can be improved by tailoring the microstructure, generally the grain morphology [9,[11][12][13][14][15][16][17], secondary-phase chemistry and the grain orientation or texture [8,, as summarized in table 1. Limited fracture toughness remains a major barrier to the wide structural application of Si 3 N 4 ceramics; thus, toughening has been one of the most researched topics.…”

Potential use of only Yb2O3in producing dense Si3N4ceramics with high thermal conductivity by gas pressure sintering

“…In gas pressure sintering, a higher N 2 pressure allows the sintering of powder compacts at higher temperatures without significant thermal decomposition. Higher temperatures not only favor β-Si 3 N 4 grain growth but also make it possible to reduce the amount of sintering additives and to use more stable compounds [3,6] [16][17][18] or ZrO 2 [7].…”

“…However, little attention was paid to the thermal conductivity of Si 3 at room temperature [1]. A considerable amount of work resulted in significantly increased thermal conductivities of Si 3 N 4 ceramics of above 100 W m −1 K −1 [2][3][4][5][6][7]. Enhanced thermal conductivity opens up new technological applications of Si 3 N 4 as substrates for integrated circuits and heat sinks in electronic devices.…”