1996
DOI: 10.1016/s0168-9002(96)00692-4
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Micro-discharge noise and radiation damage of silicon microstrip sensors

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Cited by 18 publications
(3 citation statements)
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“…This is localized breakdown due to high electric field regions at the edges of the implanted strips, causing a steep increase in leakage current and noise [16].…”
Section: Electrical Specificationsmentioning
confidence: 99%
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“…This is localized breakdown due to high electric field regions at the edges of the implanted strips, causing a steep increase in leakage current and noise [16].…”
Section: Electrical Specificationsmentioning
confidence: 99%
“…Thus the metal overlaps the implant each side by 3 µm, forming a field-plate structure. This design was chosen because it delays the onset of strip microdischarge after irradiation [16] (Section 6.3). It also protects against strip microdischarge when the bias voltage is ramped in a very dry environment [19].…”
Section: Sensors Supplied By Hamamatsu Photonicsmentioning
confidence: 99%
“…The silicon microstrip detectors in the ATLAS detector will experience a fluence of 3 x 10 14 particles/cm 2 over the 10 years of operation [1]. A radiation-tolerant design has been developed including the development of structures sustaining higher bias voltages and improvement in reducing the high electric field at the edges of implantation [2]. The radiation-tolerant silicon strip detectors developed have been evaluated, starting from the double-sided detector [3], and then the single-sided detectors with n-strip readout [4].…”
Section: Introductionmentioning
confidence: 99%