Micro-electromechanical systems based on 3C-SiC/Si heterostructures

Förster, Ch.; Cimalla, V.; Brückner, Klemens; Hein, Matthias; Pezoldt, Jörg; Ambacher, O.

doi:10.1016/j.msec.2005.07.016

Cited by 19 publications

(11 citation statements)

References 9 publications

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“…For contacting of the nanowires, basically electron beam lithography or direct writing by focused ion beams (FIB) were employed. Finally, the releasing was realized either by dry 58–63 or by wet 64 chemical etching processes. Realized freestanding nanowires are shown in Figs.…”

Section: Methodsmentioning

confidence: 99%

Characterization of Irreversible Kinase Inhibitors by Directly Detecting Covalent Bond Formation: A Tool for Dissecting Kinase Drug Resistance

et al. 2010

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Targeting protein kinases in cancer therapy with irreversible small-molecule inhibitors is moving to the forefront of kinase-inhibitor research and is thought to be an effective means of overcoming mutation-associated drug resistance in epidermal growth factor receptor kinase (EGFR). We generated a detection technique that allows direct measurements of covalent bond formation without relying on kinase activity, thereby allowing the straightforward investigation of the influence of steric clashes on covalent inhibitors in different resistant kinase mutants. The obtained results are discussed together with structural biology and biochemical studies of catalytic activity in both wild-type and gatekeeper mutated kinase variants to draw conclusions about the impact of steric hindrance and increased catalytic activity in drug-resistant kinase variants.

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Section: Methodsmentioning

confidence: 99%

Characterization of Irreversible Kinase Inhibitors by Directly Detecting Covalent Bond Formation: A Tool for Dissecting Kinase Drug Resistance

et al. 2010

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“…Silane, ethene and hydrogen were used as precursors. Prior to the growth process, the Si wafers were cleaned by a standard RCA process, which was completed by a hydrogen termination of the surface 99.…”

Section: Fabrication Technologymentioning

confidence: 99%

Micro‐ and nano‐electromechanical resonators based on SiC and group III‐nitrides for sensor applications

Brueckner

Niebelschuetz

Tonisch

et al. 2011

Physica Status Solidi (a)

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Wide-bandgap semiconductors represent an attractive option to meet the increasing demands of micro- and nano-electromechanical systems (MEMS/NEMS) by offering new functionalities, high stability, biocompatibility and the potential for miniaturization and integration. Here, we report on resonant MEMS and NEMS devices with functional layers of SiC, AlN and AlGaN/GaN heterostructures on different substrates, which have been investigated and analysed in the course of an interdisciplinary research focus programme of the German Research Foundation (DFG). The specific deposition and etching technologies necessary for the three-dimensional micro-structuring are explained. Further, the implementation of appropriate electromechanical transduction schemes is discussed. In case of SiC and AlN resonators, actuation and sensing was achieved by a magnetomotive scheme. A piezoelectric coupling scheme where the counter electrode is formed by the two-dimensional electron gas at the interface of the III/V heterostructure was realized for the AlGaN/GaN resonators. Thus, flexural and longitudinal vibration modes were excited and characterized using electrical and optical techniques. The measured key parameters of resonant frequency and quality factor are related to geometry, material and environmental parameters using analytical and finite element (FE) models. Finally, potential sensor applications are experimentally investigated

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“…The dominant approach is the growth of 3C-SiC layers on either oxidized or non-oxidized Si wafers as this clearly offers a route to larger wafer sizes that are currently available for bulk SiC. This typically produces the 3C polytype, usually in a polycrystalline form and can be achieved by a variety of CVD techniques [16][17][18][19][20][21]. PECVD has been widely studied as it requires relatively simple process conditions and can be used for large-area silicon substrates [22,23].…”

Section: Sic Mems Sensorsmentioning

confidence: 99%

SiC sensors: a review

Wright¹,

Horsfall²

2007

J. Phys. D: Appl. Phys.

250

112

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Silicon carbide has attracted considerable attention in recent years as a potential material for sensor devices. This paper reviews the current status of SiC technology for a wide range of sensor applications. It is shown that SiC MEMs devices are well-established with operational devices demonstrated at high temperatures (up to 500 °C) for the sensing of motion, acceleration and gas flow. SiC sensors devices using electrical properties as the sensing mechanism have also been demonstrated principally for gas composition and radiation detection and have wide potential use in scientific, medical and combustion monitoring applications.

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Micro-electromechanical systems based on 3C-SiC/Si heterostructures

Cited by 19 publications

References 9 publications

Characterization of Irreversible Kinase Inhibitors by Directly Detecting Covalent Bond Formation: A Tool for Dissecting Kinase Drug Resistance

Characterization of Irreversible Kinase Inhibitors by Directly Detecting Covalent Bond Formation: A Tool for Dissecting Kinase Drug Resistance

Micro‐ and nano‐electromechanical resonators based on SiC and group III‐nitrides for sensor applications

SiC sensors: a review

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