Micro-light-emitting diode with n-GaN/NiO/Au-based resistive-switching electrode for compact driving circuitry

Lee, Byeong Ryong; Park, Jae Young; Kim, Tae Geun

doi:10.1016/j.jallcom.2020.153762

Cited by 14 publications

(9 citation statements)

References 26 publications

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“…In this review, we will present RRAM-related inorganic materials with oxides, solid electrolyte and two-dimensional (2D) materials. [9,20,75], NiO [8,12,76], TiO 2 [21,77,78], HfO 2 [60,79,80], ZnO [81][82][83], and ZrO 2 [22,84,85] are always playing main roles in materials application of RS medium. The first report of RS performance in binary metal oxides was proposed by Hickmott in 1962 [91], which demonstrated the RS characteristics of Al/Al 2 O 3 /Al device under the effect of an electric field.…”

Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

“…As one of the most typical representatives of oxides, binary oxides have been explored for over half a century due to their simple composition, low manufacture cost, compatibility with traditional CMOS (complementary metal-oxide-semiconductor transistor) technology, and ease of fabrication and control. Among binary oxides, binary metal oxides such as Al 2 O 3 [ 9 , 20 , 75 ], NiO [ 8 , 12 , 76 ], TiO 2 [ 21 , 77 , 78 ], HfO 2 [ 60 , 79 , 80 ], ZnO [ 81 , 82 , 83 ], and ZrO 2 [ 22 , 84 , 85 ] are always playing main roles in materials application of RS medium.…”

Section: Thin Film Materials Of Rram Devicesmentioning

confidence: 99%

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Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

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Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

Section: Thin Film Materials Of Rram Devicesmentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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“…However, for the ITO/Ag reflective contact, they can be redirected and extracted by the reflective Ag layer, leading to an increase in the light output. The volume fractions of the reflective regions (with reference to the whole active region) are estimated to be 90.9%, 93.6% and 94.6% for the Ti/Al-based samples with chip sizes of 1280 × 1000 µm 2 , 1400 × 1400 µm 2 , and 1700 × 1700 µm 2 , respectively, and 93.1%, 95.1% and 96.0% for the ITO/Ag-based samples (supplementary Figure S4). The volume fraction increases with increasing chip size and the ITO/Ag samples give higher volume fraction than the Ti/Al samples.…”

Section: Resultsmentioning

confidence: 99%

“…Light-emitting diodes (LEDs) have been widely applied in a variety of fields, such as solid-state lighting, outdoor display, and vehicle lamp, and biomedical treatments [1][2][3][4][5][6][7][8] because of high luminance efficiency, long lifetime, and low power consumption. In particular, it was shown that vertical-geometry LEDs (VLEDs) demonstrate better current spreading characteristic, heat dissipation efficiency and reliability as compared with lateral and flip-chip geometry LEDs [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Improving Emission Uniformity of InGaN/GaN-Based Vertical LEDs by Using Reflective ITO/Ag n-Contact

et al. 2021

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We investigated the effect of Ti/Al and ITO/Ag n-type contacts on the emission uniformity and light output of different chip-size vertical-geometry light-emitting diodes (VLEDs) for vehicle headlamp application. The forward voltage of the Ti/Al-based reference VLEDs decreased from 3.38 to 3.20 V at 1500 mA with increasing chip size from (1280 × 1000 µm2) to (1700 × 1700 µm2), whereas that of the ITO/Ag-based samples changed from 3.37 to 3.15 V. Regardless of chip size, the ITO/Ag-based samples revealed higher light output power than the reference samples. For example, the ITO/Ag-based samples (chip size of 1700 × 1700 µm2) exhibited 3.4% higher light output power at 1500 mA than the reference samples. The ITO/Ag samples underwent less degradation in the Wall-plug efficiency (WPE) than the reference sample. For instance, the ITO/Ag-based samples (1700 × 1700 µm2) gave 4.8% higher WPE at 1500 mA than the reference samples. The ITO/Ag-based samples illustrated more uniform emission than the Ti/Al-based sample. Both the reference and ITO/Ag-based samples underwent no degradation when operated at 1500 mA for 1000 h.

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“…[27] For reference, the performances of the proposed YIG-based RS device and recently reported RS devices are compared in Table 1. [21][22][23]…”

Section: Properties and Optimization Of Rs Electrodementioning

confidence: 99%

Crosstalk‐Free Mesa‐Etched Passive‐Matrix Microscale Light‐Emitting Diode Array Using Yttrium‐Iron Garnet P‐Type Resistive‐Switching Electrodes

Kim

Lee

Son

et al. 2022

Advanced Optical Materials

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Microscale light‐emitting diodes (µLEDs) have ushered in a new era of small‐sized high‐resolution displays by integrating numerous microscale pixels within a limited panel area. However, to realize passive‐matrix‐based high‐resolution µLED displays, it is important to prevent image diffusion (crosstalk) between the pixels. Herein, p‐type resistive‐switching (RS) electrodes are introduced in a mesa‐etched passive‐matrix‐based µLED array structure to block electrical interference between adjacent pixels and eliminate cross‐talk. To distinguish between addressed and unaddressed pixels in the µLED array structure, the resistance state of the RS electrode is modulated from low (52 Ω) to high (1.2 × 107 Ω). Moreover, the RS electrode exhibits a high on/off ratio (106), good retention (105 s), and stable endurance (104 cycles). X‐ray photoelectron spectroscopy analysis reveals that the switching mechanism in the RS electrodes is achieved by the generation and annihilation of oxygen vacancies in the conductive path. Consequently, the fabricated µLEDs with RS electrodes exhibit a 93.1% higher electroluminescence intensity and 95.3% higher light output power compared to a reference device fabricated through combined mesa‐ and isolation‐etching.

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Micro-light-emitting diode with n-GaN/NiO/Au-based resistive-switching electrode for compact driving circuitry

Cited by 14 publications

References 26 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Improving Emission Uniformity of InGaN/GaN-Based Vertical LEDs by Using Reflective ITO/Ag n-Contact

Crosstalk‐Free Mesa‐Etched Passive‐Matrix Microscale Light‐Emitting Diode Array Using Yttrium‐Iron Garnet P‐Type Resistive‐Switching Electrodes

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