2007
DOI: 10.1016/j.nimb.2007.02.053
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Micro-machining of resists on silicon by proton beam writing

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Cited by 48 publications
(24 citation statements)
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“…Using these unique features of PBW, micromachining of resist with a thickness of up to 50 lm,has been demonstrated. (Springham et al 1997a, b;Uchiya et al 2007) In this paper, we report electroplating of a Ni structure on the micro-machined PMMA by PBW. The microstructure of PMMA and Ni were evaluated by scanning electron microscope (SEM).…”
Section: Introductionmentioning
confidence: 75%
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“…Using these unique features of PBW, micromachining of resist with a thickness of up to 50 lm,has been demonstrated. (Springham et al 1997a, b;Uchiya et al 2007) In this paper, we report electroplating of a Ni structure on the micro-machined PMMA by PBW. The microstructure of PMMA and Ni were evaluated by scanning electron microscope (SEM).…”
Section: Introductionmentioning
confidence: 75%
“…The proton beam writing was carried out with the resolution of approximately 3,500 9 3,500 pixels in the area of 300 9 300 lm by electrostatic deflection without using beam blanking system (Sakai et al 2002(Sakai et al , 2005van Kan et al 2001). The fluence of protons is varied from 60 to 100 nC/mm 2 (Uchiya et al 2007;van Kan et al 1999b). After the PBW, the PMMA samples were developed with IPA-water (7:3) for 20 min and rinsed in deionized water (Ansari et al 2004).…”
Section: Methodsmentioning
confidence: 99%
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“…In this study, we create patterned microstructures between dense micro-protrusions on the FEP surfaces using 3 MeV proton beam writing (PBW) and subsequent 250 keV nitrogen ion beam irradiation. PBW is a direct writing process using a MeV focused proton beam [7][8][9][10][11][12]. It is usually applied in three-dimensional nanofabrication as a maskless lithographic technique [7].…”
Section: Introductionmentioning
confidence: 99%
“…Secondly, the projected range of the protons can be controlled with the beam energy. It is useful for the fabrication of high aspect ratio structures and prototyping of devices [6][7][8] .…”
Section: Introductionmentioning
confidence: 99%