Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method

Abstract

We present experimental results regarding to the evaluation of growth-induced defects in 6H and 4H SiC crystals grown by sublimation method, and these defects are characterized by using micro-Raman spectroscopy. From Raman results, we could reveal the stacking disorders related to strain which occurs along the boundary position of planar defects and micropipes in 6H SiC crystals. Also, we found the 15R was generated due to the change of stacking sequence from 4H to 15R during crystal growth because the 15R formation area is adjacent to 4H, considering the relation between formation probability and temperature.

The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source

“…Variation of FWHM of TO mode peak and intensity ratio (E 1 /E 2, high ) of N-doped 6H-SiC single crystals (a) as a function of nitrogen addition ratio (N 2 /(N 2 +Ar) = 0 -30%) without additional Si and (b) as a function of additional silicon powder (0 -2 wt%) at fixed N 2 /(N 2 +Ar) = 3%. peak or band around at 797.2 cm -1 [12]. Accordingly, the crystallinity and stacking disordered defects of the 6H-SiC crystal can be represented by the variation of the FWHM (E 2,high ) and peak intensity ratio (E 1 /E 2, High ), respectively.…”