Micro-Raman spectroscopy in polycrystalline CuInSe2 formation

Park, J. H.; Yang, In Sang; Cho, H. Y.

doi:10.1007/bf00332168

Cited by 46 publications

(20 citation statements)

References 9 publications

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“…Good quality single crystals were prepared and measured under the application of selection rules [27]. Moreover, several theoretical calculations on the vibrational properties of CuInSe 2 [45][46][47] exist that are in good agreement with the results of experimental studies [17,[27][28][29][30][31][32]. CuAu-ordered CuInSe 2 has been also studied theoretically [47] and experimentally [48].…”

Section: Methodsmentioning

confidence: 96%

“…There are several Raman studies on CuGaSe 2 single crystals [14][15][16], polycrystalline crystals [17][18], thin films [19][20][21][22], alloyed materials [15], [23]- [24] and on the ordered vacancy compound (CuGa 3 Se 5 ) [25][26]. There are also several Raman studies on CuInSe 2 single crystals [17], [27], thin films [28][29][30], alloyed materials [31,32] and the ordered vacancy compound (CuIn 3 Se 5 ) [25]. On the contrary, there are just a few studies published on the Raman scattering from CuIn 1-x Ga x Se 2 films [16], [33][34][35].…”

Section: Introductionmentioning

confidence: 97%

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Structural properties of chalcopyrite thin films studied by Raman spectroscopy

Papadimitriou

Esser²,

Chen

2005

Physica Status Solidi (b)

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PACS 68.55. Jk, 78.30.Hv, 78.55.Hx This paper reviews the structural properties of ternary chalcopyrite absorbers for solar-cell device applications studied by Raman Spectroscopy. Raman mode assignment in CuGaSe 2 is reviewed according to the results of previous and present Raman and IR spectroscopic studies. The compositional dependence of Raman modes, in particular, the composition dependent frequency shift of the A 1 -mode, is suggested for the analysis of the chalcopyrite film structure. Order and disorder effects are discussed with reference to the excitation of phonon modes assigned to Cu -Au ordered phases and to defect related phases, respectively. Phase separation effects associated with the formation of secondary microcrystalline Cu x Se-or Cu x S-phases and the observation of Raman scattering from these phases are also discussed.

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Section: Methodsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 97%

Structural properties of chalcopyrite thin films studied by Raman spectroscopy

Papadimitriou

Esser²,

Chen

2005

Physica Status Solidi (b)

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“…On the other hand, an isolated peak at 258 cm -1 related to the presence of a high-conductive Cu x Se phase with symmetry of lattice vibrations different from chalcopyrite [9,12] was not observed in RS spectra. The decreasing of the sulfur content leads to the decrease of A 1 and "companion" modes of CuInS 2 and to the improvement of the position and FWHM of A 1 mode of CuInSe 2 (Fig.…”

Section: Raman Spectramentioning

confidence: 51%

“…It was established that the "companion" mode is not related to chemical effects, but to structural ones [9]. According to the detailed analysis of this mode presented in papers [9,10] this band is related to the formation of metastable domains with a different crystallographic order, which was identified as 'Cu-Au' (CA) ordering. The presence of A 1 I mode is strongly affected by the temperature of growth, and its contribution is higher for the samples grown at low temperatures [11].…”

Section: Raman Spectramentioning

confidence: 98%

Preparation and properties of In/p‐Cu(In_1–xGa_x)(S_1–ySe_y)₂surface‐barrier structures

Zaretskaya

Гременок

Zalesski

et al. 2009

Phys. Status Solidi (c)

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Cu(In1–xGax)(S1–ySey)2 (CIGSS) thin films were prepared by the simultaneous selenizarion/sulfurization of Cu‐In‐Ga metallic alloys. Full characterizations have been carried out using XRD, SEM, EDX, AES and Raman scattering measurements. Photosensitive In/p ‐CIGSS surface‐barrier rectifying structures were created by thermal deposition of pure Incontacts onto the surface of the CIGSS as grown films. The influences of the thin films chemical composition and the illumination conditions on the photo‐electric parameters of In/p ‐CIGSS structures were studied. Analysis of the results showed the availability of the prepared CIGSS films for creation of high efficiency thin films photovoltaic devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The features related to secondary phases or ODC were not observed in Raman spectra. [30][31] The peak appeared at 118 cm −1 in all samples corresponds to the laser line which generally use for the calibration of Raman wave number.…”

Section: Resultsmentioning

confidence: 82%

Rapid Thermal Processed CuInSe₂Layers Prepared by Electrochemical Route for Photovoltaic Applications

Rohom

Londhe

Chaure

2017

J. Electrochem. Soc.

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Impact of rapid thermal (RT) annealing and normal selenization process on the properties of CuInSe 2 (CIS) layers prepared by electrochemical route is reported. Cyclic voltammetric measurement was carried out to optimize the co-deposition potentials. A range of characterization techniques were employed to study the properties. Three prominent reflections(112),(204/220) and (312/116) of tetragonal CIS were exhibited in as-deposited CIS layers. Upon selenization, the crystallinity was found to be improved. Uniform, compact, densely packed surface morphology was observed in as-prepared sample. Large grains are developed upon RT annealing due to recrystallization. Elemental composition obtained by EDAX confirms the growth of stoichiometric layers. Photo-electrochemical study demonstrates the p-type conductivity. Current-voltage, capacitance-voltage, electrochemical impedance spectroscopy were conducted to investigate the influence of the grain size and crystallinity on electrical properties. Energy band-gap estimated from absorption spectra were 1.18, 1.04 and 0.98 eV for as-deposited, selenized, RT annealed samples, respectively. X-ray Photoelectron spectroscopy confirms the presence of Cu + , In 3+ and Se 2− oxidation states in all CIS layers. Power conversion efficiency of 3.05% and 5.94% were achieved for selenized and RT annealed samples, respectively. The improved efficiency measured for RT annealed sample is proposed due to the growth of highly crystalline, large grain and compact surface morphology. Considering the energy crisis, solar energyhasemerged as an important non-conventional energy source. Various direct bandgap, high optical absorption coefficient materials have been used toward the fabrication of thin film solar cells. CuInSe 2 (CIS) is one of the intensively studied active absorber materials in solar cells because of its direct bandgap ∼1.05 eV, high absorption coefficient, large mean free pathand long diffusion length of minority carriers.1,2 Furthermore, the energy gap can be increased upon addition of gallium and/or sulfurization in controlled ambient. Device efficiency over 22% has been achieved for CIGS based thin film solar cells using co-evaporation method.3 However, in spite of high efficiency the high production cost is one of thesevere obstacles. Various reports are available in the literature on the development of CIS solar cells using vacuum 4 and non-vacuum processes.5 Electrochemical technique has been used for the preparation of CIS based solar cells.6 A low-cost electrochemical technique is widely used for the growth of metal oxide, insulator and semiconductor thin films because of higher growth rate, deposition over arbitrary shaped surface, possibility to grow highly crystalline and controlled stoichiometric alloy thin films. The best reported CIGS solar cells produced via this technique have measured 15.4% efficiency by Bhattacharya et al. 7 in conjunction with PVD method. Electrodeposition of CIS thin films can be performed either by one-step 8 or two-step approach. 9 Fabri...

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Micro-Raman spectroscopy in polycrystalline CuInSe2 formation

Cited by 46 publications

References 9 publications

Structural properties of chalcopyrite thin films studied by Raman spectroscopy

Structural properties of chalcopyrite thin films studied by Raman spectroscopy

Preparation and properties of In/p‐Cu(In_1–xGa_x)(S_1–ySe_y)₂surface‐barrier structures

Rapid Thermal Processed CuInSe₂Layers Prepared by Electrochemical Route for Photovoltaic Applications

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Micro-Raman spectroscopy in polycrystalline CuInSe2 formation

Cited by 46 publications

References 9 publications

Structural properties of chalcopyrite thin films studied by Raman spectroscopy

Structural properties of chalcopyrite thin films studied by Raman spectroscopy

Preparation and properties of In/p‐Cu(In1–xGax)(S1–ySey)2 surface‐barrier structures

Rapid Thermal Processed CuInSe2Layers Prepared by Electrochemical Route for Photovoltaic Applications

Contact Info

Product

Resources

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Preparation and properties of In/p‐Cu(In_1–xGa_x)(S_1–ySe_y)₂surface‐barrier structures

Rapid Thermal Processed CuInSe₂Layers Prepared by Electrochemical Route for Photovoltaic Applications