Micro‐Resonator Soliton Generated Directly with a Diode Laser

Volet, Nicolas; Xu, Yuehong; Yang, Qi‐Fan; Stanton, Eric J.; Morton, Paul A.; Yang, Ki Youl; Vahala, Kerry J.; Bowers, John E.

doi:10.1002/lpor.201700307

Cited by 33 publications

(20 citation statements)

References 77 publications

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“…The phase noise of solitonbased mmWaves can be further reduced in the future by using a pump laser with higher stability 35 , tuning the soliton into quiet operation point 20 , and implementing better temperature control of the entire system. For instance, a compact external-cavity diode laser has recently achieved a Lorentzian linewidth of 62 Hz 36 . Using this laser to drive the soliton could further reduce the free-running mmWave phase noise.…”

Section: Resultsmentioning

confidence: 99%

Towards high-power, high-coherence, integrated photonic mmWave platform with microcavity solitons

et al. 2021

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Millimetre-wave (mmWave) technology continues to draw great interest due to its broad applications in wireless communications, radar, and spectroscopy. Compared to pure electronic solutions, photonic-based mmWave generation provides wide bandwidth, low power dissipation, and remoting through low-loss fibres. However, at high frequencies, two major challenges exist for the photonic system: the power roll-off of the photodiode, and the large signal linewidth derived directly from the lasers. Here, we demonstrate a new photonic mmWave platform combining integrated microresonator solitons and high-speed photodiodes to address the challenges in both power and coherence. The solitons, being inherently mode-locked, are measured to provide 5.8 dB additional gain through constructive interference among mmWave beatnotes, and the absolute mmWave power approaches the theoretical limit of conventional heterodyne detection at 100 GHz. In our free-running system, the soliton is capable of reducing the mmWave linewidth by two orders of magnitude from that of the pump laser. Our work leverages microresonator solitons and high-speed modified uni-traveling carrier photodiodes to provide a viable path to chip-scale, high-power, low-noise, high-frequency sources for mmWave applications.

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Section: Resultsmentioning

confidence: 99%

Towards high-power, high-coherence, integrated photonic mmWave platform with microcavity solitons

et al. 2021

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“…However, exceptionally high nonlinear conversion efficiencies are required for this fully integrated system. In particular, avoiding the use of amplifiers for the microresonator pump laser and the SHG pump light will be a significant advancement [12]. Given the limitations presented by the SiN microresonator quality factor that restricts the pump power and by the detector noise, extremely high SHG efficiency is necessary to achieve a sufficient signal-to-noise ratio.…”

Section: Introductionmentioning

confidence: 99%

Efficient second harmonic generation in nanophotonic GaAs-on-insulator waveguides

et al. 2020

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Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the intense nonlinear interactions of nanophotonic waveguides can be leveraged to meet these requirements. Here we demonstrate second harmonic generation (SHG) in GaAs-on-insulator waveguides with unprecedented efficiency of 40 W −1 for a single-pass device. This result is achieved by minimizing the propagation loss and optimizing phase-matching. We investigate surface-state absorption and design the waveguide geometry for modal phase-matching with tolerance to fabrication variation. A 2.0 µm pump is converted to a 1.0 µm signal in a length of 2.9 mm with a wide signal bandwidth of 148 GHz. Tunable and efficient operation is demonstrated over a temperature range of 45 ℃ with a slope of 0.24 nm/℃. Wafer-bonding between GaAs and SiO 2 is optimized to minimize waveguide loss, and the devices are fabricated on 76 mm wafers with high uniformity. We expect this device to enable fully integrated self-referenced frequency combs and high-rate entangled photon pair generation.

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“…Recent advances in fabrication have enabled access to the anomalous group velocity dispersion regime (GVD) with sufficient waveguide height 24 , and circumvented the problems associated with the high tensile stress of Si 3 N 4 film 25 . Although the soliton microcomb has been directly generated with a diode laser in a silica microresonator coupled to a tapered optical fiber recently 26 , this has not been possible for integrated devices including Si 3 N 4 . Yet, there are remaining challenges in soliton formation in Si 3 N 4 microresonators, related to: (i) The comparatively low quality (Q) factor which increases the threshold power of soliton formation, compared to e.g.…”

Section: Introductionmentioning

confidence: 99%

Ultralow-power chip-based soliton microcombs for photonic integration

Raja

Karpov

Ghadiani

et al. 2019

Optical Fiber Communication Conference (OFC) 2019

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The generation of dissipative Kerr solitons in optical microresonators has provided a route to compact frequency combs of high repetition rate, which have already been employed for optical frequency synthesizers, ultrafast ranging, coherent telecommunication and dual-comb spectroscopy. Silicon nitride (Si 3 N 4 ) microresonators are promising for photonic integrated soliton microcombs. Yet to date, soliton formation in Si 3 N 4 microresonators at electronically detectable repetition rates, typically less than 100 GHz, is hindered by the requirement of external power amplifiers, due to the low quality (Q) factors, as well as by thermal effects which necessitate the use of frequency agile lasers to access the soliton state. These requirements complicate future photonic integration, heterogeneous or hybrid, of soliton microcomb devices based on Si 3 N 4 microresonators with other active or passive components. Here, using the photonic Damascene reflow process, we demonstrate ultralow-power single soliton formation in high-Q (Q 0 > 15 × 10 6 ) Si 3 N 4 microresonators with 9.8 mW input power (6.2 mW in the waveguide) for devices of electronically detectable, 99 GHz repetition rate. We show that solitons can be accessed via simple, slow laser piezo tuning, in many resonances in the same sample. These power levels are compatible with current silicon-photonics-based lasers for full photonic integration of soliton microcombs, at repetition rates suitable for applications such as ultrafast ranging and coherent communication.Our results show the technological readiness of Si 3 N 4 optical waveguides for future all-on-chip soliton microcomb devices. arXiv:1805.00069v2 [physics.optics]

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Micro‐Resonator Soliton Generated Directly with a Diode Laser

Cited by 33 publications

References 77 publications

Towards high-power, high-coherence, integrated photonic mmWave platform with microcavity solitons

Towards high-power, high-coherence, integrated photonic mmWave platform with microcavity solitons

Efficient second harmonic generation in nanophotonic GaAs-on-insulator waveguides

Ultralow-power chip-based soliton microcombs for photonic integration

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