“…Previous studies showed, however, gain instabilities and gain variations due to polarization and charge accumulation at the surface of high-resistivity substrates, such as boron-silicate glass. To avoid charge accumulation and substrate instability, the optimum substrate should have some properties such as a resistivity in the range of 10 9 -10 12 cm at 20˚C and good electronic conduction and radiation hardness [2]. In recent years, many research groups have choosen different materials as substrates or adopted some steps to improve the substrate's properties such as using glasses of low resistivity (D263) as substrates, applying passivation layers [3,4] and implanting different ions (C, B, Fe, P, etc) into different substrates (glass, quartz, sapphire, etc), but all inevitably have shortcomings.…”