Microbridge testing of silicon nitride thin films deposited on silicon wafers

Zhang, T.-Y; Su, Yu; Qian, Chen; Zhao, Minghao; Chen, L.-Q

doi:10.1016/s1359-6454(00)00088-4

Cited by 129 publications

(61 citation statements)

References 26 publications

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“…In this paper, we present both the theoretical analysis and the microbridge testing results of residually compressively stressed PECVD SiO x films 2,32,33 . The general solution to the bending behavior of a microbridge with an initial compressive stress was derived by following Timoshenko and Woinowsky-Krieger's approach 34 , which was qualitatively different from the solution with an initially residual tensile stress 27 . To get more precise solutions, we specifically considered and modeled the substrate deformation with three coupled springs.…”

Section: Plasma-enhanced Chemical Vapor Deposited (Pecvd) Silane-basementioning

confidence: 99%

“…Though the deflection of the beam could be large, the base deformation is assumed to be linear and thus it is modeled by three coupled springs 27 , as shown in Fig. 3(a).…”

Section: B Deformation Of the Substratementioning

confidence: 99%

“…Prior to each indentation, both the length and width of each microbridge were precisely measured with the digital coordinates provided by the TriboIndenter TM system, which had a lateral resolution of 0.1 nm. The gap between two adjacent bridges was designed to be large enough so that each microbridge can be treated as an isolated sample 27 . Each microbridge was carefully aligned to be perfectly perpendicular to either the x, or y axis of the stage of the nanoindenter.…”

Section: B Microbridge Testmentioning

confidence: 99%

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Microbridge testing of plasma-enhanced chemical-vapor deposited silicon oxide films on silicon wafers

Cao

Zhang

2005

Journal of Applied Physics

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This is the Pre-Published Version 2 Plasma-enhanced chemical vapor deposited (PECVD) silane-based oxides (SiO x ) have been widely used in both microelectronics and MEMS (MicroElectroMechanical Systems) to form electrical and/or mechanical components. In this paper, a novel nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young's modulus of PECVD SiO x films on silicon wafers. Theoretically, we considered both the substrate deformation and residual stress in the thin film and derived a closed formula of deflection versus load. The formula fitted the experimental curves almost perfectly, from which the residual stresses and Young's modulus of the film were determined. Experimentally, freestanding microbridges made of PECVD SiO x films were fabricated using the silicon undercut bulk micromachining technique. Some microbridges were subjected to rapid thermal annealing (RTA) at temperatures of 400ºC, 600ºC or 800ºC to simulate the thermal process in the device fabrication. The results showed that the asdeposited PECVD SiO x films had a residual stress of -155±17 MPa and a Young's modulus of 74.8±3.3 GPa. After the RTA, the Young's modulus remained relatively unchanged at around 75 GPa, however significant residual stress hysteresis was found in all the films. A microstructurebased mechanism was then applied to explain the experimental results of the residual stress changes in the PECVD SiO x films after the thermal annealing.

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Section: Plasma-enhanced Chemical Vapor Deposited (Pecvd) Silane-basementioning

confidence: 99%

“…Though the deflection of the beam could be large, the base deformation is assumed to be linear and thus it is modeled by three coupled springs 27 , as shown in Fig. 3(a).…”

Section: B Deformation Of the Substratementioning

confidence: 99%

Section: B Microbridge Testmentioning

confidence: 99%

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Microbridge testing of plasma-enhanced chemical-vapor deposited silicon oxide films on silicon wafers

Cao

Zhang

2005

Journal of Applied Physics

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“…59) and should be used as a guide for small scale measurements. A comparison of several smallscale mechanical testing approaches 23,35,[60][61][62][63][64][65][66][67][68][69][70][71] is summarized in Fig. 1, where the dynamic range in both displacement and force measurement is highlighted.…”

Section: Introductionmentioning

confidence: 99%

In situ nanomechanical testing in focused ion beam and scanning electron microscopes

Gianola

Sedlmayr

Mönig

et al. 2011

Review of Scientific Instruments

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The recent interest in size-dependent deformation of micro-and nanoscale materials has paralleled both technological miniaturization and advancements in imaging and small-scale mechanical testing methods.Here we describe a quantitative in situ nanomechanical testing approach adapted to a dualbeam focused ion beam and scanning electron microscope. A transducer based on a three-plate capacitor system is used for highfidelity force and displacement measurements. Specimen manipulation, transfer, and alignment are performed using a manipulator, independently controlled positioners, and the focused ion beam. Gripping of specimens is achieved using electron-beam assisted Pt-organic deposition. Local strain measurements are obtained using digital image correlation of electron images taken during testing. Examples showing results for tensile testing of single-crystalline metallic nanowires and compression of nanoporous Au pillars will be presented in the context of size effects on mechanical behavior and highlight some of the challenges of conducting nanomechanical testing in vacuum environments. The recent interest in size-dependent deformation of micro-and nanoscale materials has paralleled both technological miniaturization and advancements in imaging and small-scale mechanical testing methods. Here we describe a quantitative in situ nanomechanical testing approach adapted to a dualbeam focused ion beam and scanning electron microscope. A transducer based on a three-plate capacitor system is used for high-fidelity force and displacement measurements. Specimen manipulation, transfer, and alignment are performed using a manipulator, independently controlled positioners, and the focused ion beam. Gripping of specimens is achieved using electron-beam assisted Pt-organic deposition. Local strain measurements are obtained using digital image correlation of electron images taken during testing. Examples showing results for tensile testing of single-crystalline metallic nanowires and compression of nanoporous Au pillars will be presented in the context of size effects on mechanical behavior and highlight some of the challenges of conducting nanomechanical testing in vacuum environments. Disciplines Engineering | Materials Science and Engineering Comments

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“…The nanoindentation-based microbridge testing method pioneered by Zhang TY et al (2000) and further developed in this section has the capability of simultaneously measuring the residual stress, Young's modulus, yield strength, and the stress-strain relation of the thin film materials Su et al 2000;Xu et al 2003). In this method, freestanding microbridges are fabricated from the thin films using the micromachining techniques (Madou 2002).…”

Section: Introductionmentioning

confidence: 99%

Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

Zhang¹

2007

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, seerching data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Washington Headquarters Service, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and SUPPLEMENTARY NOTES14. ABSTRACT Plasma enhanced chemical vapor deposited (PECVD) silicon oxide (SiOx) is the most commonly used interlayer dielectric (ILD) in MEMS devices and structures. In this project, PECVD SiOx is chosen as an example for the systematic study of mechanical behavior and underlying casual mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms. In this project, PECVD SiO, is chosen as an example for the systematic study of mechanical behavior and underlying causal mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms. SUBJECT TERMSMechanical behaviors of the PECVD SiOx thin films are probed at 1) different size scales (from wafer level down to micro/nano-scale, and different lengthscale within each realm); 2) different temperatures (from room temperature up to 1100 0C); and 3) with a combination of different experimental techniques (such as substrate curvature measurements, nanoindentation tests, and a novel "microbridge testing" technique, etc.). A broad range of mechanical analysis is covered, including film stress and related material properties changes, elastic properties, plastic properties (both time-independent and time-dependent), deformation mechanisms (both at room temperature and elevated temperatures).Wherever applicable, materials analysis techniques such as SEM, AFM, FTIR, XRD, and SIMS were employed to strengthen the discussions on the structureproperties relationship and the causal mechanisms of the mechanical responses of the PECVD SiOx. These experiments reveal various interesting arid disiirictive characteristics of the mechanical responses of the PECVD SiOx thin films, and the microstructural causal mechanisms for each of them are analyzed in depth.The outcome of this work will provide a comprehensive characterization of the mechanical responses of the PECVD SiOx thin films under different thermal conditions, stress levels, size scales, and in both elastic and plastic regions. In addition, both new experimental methodologies and theoretical models for data 3 analysis are resulted, which can be readily applied to a wide variety of thin film materials for various different applications. Last but not least, the physical causal mechanisms for the experimental results are elucidated, ...

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Microbridge testing of silicon nitride thin films deposited on silicon wafers

Cited by 129 publications

References 26 publications

Microbridge testing of plasma-enhanced chemical-vapor deposited silicon oxide films on silicon wafers

Microbridge testing of plasma-enhanced chemical-vapor deposited silicon oxide films on silicon wafers

In situ nanomechanical testing in focused ion beam and scanning electron microscopes

Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

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