Microcavity effects in the photoluminescence of GaAs microcrystals

Juen, S.; Überbacher, K.; Baldauf, Julia; Lamprecht, K. F.; Höpfel, R. A.

doi:10.1063/1.109503

Cited by 6 publications

(3 citation statements)

References 9 publications

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“…The crystallites are strongly dielectrically confined due to a change in the index of refraction at their surface, enabling three dimensional light confinements. 21,22 Fig. 6 Schematic of Indium adatom concentration along the nanowire sidewalls.…”

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confidence: 99%

Vapor–liquid–solid meets vapor–solid growth mechanism for fabricating high quality indium nitride crystallites

2011

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confidence: 99%

Vapor–liquid–solid meets vapor–solid growth mechanism for fabricating high quality indium nitride crystallites

2011

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“…For instance, the above InN nanostructures may be used in IR nanocavity lasing, since the size of these crystallites is on the scale of InN emission wavelength. 44,45 Fig. 6 The SEM images of the entire growth process of InN nanostructures at different growth times under the same growth conditions:…”

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confidence: 99%

Synthesis, microstructure, growth mechanism and photoluminescence of high quality [0001]-oriented InN nanowires and nanonecklaces

et al. 2015

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Novel indium nitride (InN) based nanomaterial is important for high speed electronics and infrared optoelectronics. In this paper, high quality Indium nitride (InN) nanostructures including nanowires and nanonecklaces, have been grown on one substrate by chemical vapor deposition. The morphologies and microstructures of InN nanowires and nanonecklaces were characterized, which confirmed their chemical composition as well as single crystallinity. The InN nanonecklaces consist of multiple beads composed of two equilateral truncated hexagonal cones faceted with { } 1 1 10 and { } 1 1 10 planes. The growth mechanism of the InN nanonecklace was studied and a three-step process was suggested for the growth. Finally, room temperature photoluminescence spectra of the two nanostructures showed the near band edge emissions of around 0.73 eV, where the emission from nanonecklace was found to be stronger, indicating the promise for near-infrared optoelectronics applications.Group III nitride semiconductors are extensively studied materials in the last two decades for broad technologies ranging from light emitters to fast electronics. Among them, much effort was dedicated to the study of InN for its distinguished physical and chemical properties [1][2][3][4][5] , especially the high electrical conductivity and electron mobility. These merits may lead to potential applications in high speed electronic devices, terahertz spectroscopy [6] , biosensors [7] , solar cells [8] , Fig. 5 TEM and HRTEM images of the InN nanowire and InN nanonecklace. (a) TEM image of an individual nanowire, (b) The corresponding HRTEM image and SAED pattern of the nanowire. (c) TEM image of an individual nanonecklace, (d) The corresponding HRTEM image and FFT pattern of the nanonecklace. (e) Space-filling model of ideal [0001] nanonecklace and schematic representation of Miller indexing of the various faces of crystal (left) and the corresponding crystal unit of the InN nanonecklace (right).Moreover, it should be noted that the above theoretical analysis is based on stoichiometric and ideal slow growth condition. In reality, the growth is also subject to other factors. In the case here, the In/N source ratio would render drastically different growth patterns like nanowires/nanonecklace. This phenomenon is commonly occurred in nanomaterial growth. For example, one CVD growth can yield six different morphologies in Gallium Sulfide structures [41] .Here the detailed theoretical analysis beyond BFDH method is not conducted, since this report is mainly focused on the experiment growth demonstration of peculiar InN nanostructures. 1 1 10 planes possess finite charges and dipole moments, they will give a rise to inversely positive and negative electrostatic surface energy. To keep the overall structure stable, the total surface free energy including the electrostatic surface energy and the surface

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“…Experiments have been done with GaAs microcrystals deposited on Si substrate and immersed in liquid nitrogen [31]. The size selected crystals exhibit modified photoluminescence spectra with blue shifts up to 10 meV.…”

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Light Emission by Semiconductor Nanostructures in Dielectric Medium or Close to Plane Interface

Lavallard

1996

Acta Phys. Pol. A

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We review several situations in which the emission rate of a nanostructure is modified by its environment. We first consider smaJl objects embedded in media with different refractive indices. The local electromagnetic field and the rate of spontaneous emission of the nanostructure are enhanced or inhibited by the induced dipole charges on the interface. In quantum wells or nanocrystals embedded in a low dielectric constant medium, the binding energy of excitons is increased. In anisotropic microcrystals, the local field is anisotropic and emission of light is polarized. We consider especially the case of p+-doped porous silicon in which nanocrystals are elongated. Another interesting situation occurs when a dipole is in the vicinity of a dielectric interface. The local field acting on the dipole results from the interferences of incident and reflected beams. Contributions from evanescent waves are important when the dipole is located in the medium of low refractive index, very close to the surface. The intensity of emission and its pattern are modified by the vicinity of the dielectric interface. Close to the interface semiconductor/air, the exciton binding energy is increased. In the vicinity of a metallic surface, á nonradiative transfer to the metal occurs for small distances of the nano-object or quantum weJl to the surface and the quantum efficiency varies with the distance to the metallic surface. The exciton binding energy of a quantum well is decreased close to a metallic surface.PACS numbers: 78.20.Βh, 78.55.Cr, 78.55.Et 1. Introduction The rate of spontaneous emission of a dipole is not an intrinsic property of the dipole but depends on its environment [1]: dielectric medium [2-5], dielectric interface [6][7][8], metallic interface [9,10] or cavity [11]. The modification of the emission rate of a dipole has been studied theoretically for many years. Numerous experimental studies have been done either with fluorescent ions or dye moleculeS [12][13][14][15][16][17]. In semiconductor physics the effect of a cavity on the rate of spontaneous emission of a quantum well was recognized recently [18,19], and during the last years, only a few studies have been done on the effect of a dielectric

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Microcavity effects in the photoluminescence of GaAs microcrystals

Cited by 6 publications

References 9 publications

Vapor–liquid–solid meets vapor–solid growth mechanism for fabricating high quality indium nitride crystallites

Vapor–liquid–solid meets vapor–solid growth mechanism for fabricating high quality indium nitride crystallites

Synthesis, microstructure, growth mechanism and photoluminescence of high quality [0001]-oriented InN nanowires and nanonecklaces

Light Emission by Semiconductor Nanostructures in Dielectric Medium or Close to Plane Interface

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