Microchannel plate detector for low voltage scanning electron microscopes

Russell, P. E.; Mancuso, J.F.

doi:10.1111/j.1365-2818.1985.tb02686.x

Cited by 26 publications

(9 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is imperative to metrology that the s g being measured be symmetric. Asymmetric sign collection is especially troublesome where linewidth measurements of microcircuit patterns are being made [73,113]. These limitations, and others, have led recent investigators to reconsider secondary electron collection mechanisms and detectors.…”

Section: Improved Electron Detection Capabilitiesmentioning

confidence: 99%

Critical issues in scanning electron microscope metrology

Postek¹

1994

J. RES. NATL. INST. STAN.

View full text Add to dashboard Cite

During the manufacturing of presentday integrated circuits, certain measurements must be made of the submicrometer structures composing the device with a high degree of repeatability. Optical microscopy, scanning electron microscopy, and the various forms of scanning probe microscopies are major microscopical techniques used for this submicrometer metrology. New techniques applied to scanning electron microscopy have improved some of the limitations of this technique and time will permit even further improvements. This paper reviews the current state of scanning electron microscope (SEM) metrology in light of many of these recent improvements.

show abstract

Section: Improved Electron Detection Capabilitiesmentioning

confidence: 99%

Critical issues in scanning electron microscope metrology

Postek¹

1994

J. RES. NATL. INST. STAN.

View full text Add to dashboard Cite

show abstract

“…Observation of the contact holes using a secondaryelectron detector such as a channel plate mounted above the specimen on the final-lens polepiece (Russell 1984, Russell andMancouso 1985) or the low profile channel plate detector being developed for the NIST Metrological Electron Microscope (Postek et al 1989c) may permit even further improvement in the observation of contact holes, and work is presently in progress in that area.…”

Section: Photoresist On Siliconmentioning

confidence: 99%

Specimen biasing to enhance or suppress secondary electron emission from charging specimens at low accelerating voltages,

1989

View full text Add to dashboard Cite

Biasing of the specimen is shown to produce improved images in the scanning electron microscope at low beam energies (0.8–2.5 keV) when charging effects (induced by the primary electron beam), topographic effects, or detector shadowing effects would otherwise be present. Examples of such improvement are given for gallium arsenide field‐effect transistors (positive charging), patterned photoresist layers on silicon wafers (negative charging and shadowing in contact holes), fractured polymethylmethacrylate (negative charging), polyethylene wrapper material (positive charging), and polished diamond tools (positive charging). It is concluded that specimen biasing may be a simpler and more convenient way to achieve some of the advantages of the converted backscattered secondary electron (CBSE) technique for imaging, but without some of the fundamental disadvantages of that technique. Characterization of this backscattered electron‐derived image bears further investigation for possible metrological applications.

show abstract

“…The detector gives good results, but is rather complicated. Several authors propose microchannel plates as detectors for LVSEM (Helbig et al 1987, Postek et al 1990, Russel 1984, Russel and Manusco 1985.…”

Section: Introductionmentioning

confidence: 99%

Detectors for low voltage scanning electron microscopy

Autrata

Hejna

1991

Scanning

View full text Add to dashboard Cite

Two simple electron detectors (low and high take-off angles) for low-voltage scanning electron microscopy were built and tested. They contain large area scintillators with an applied high voltage and are able to detect backscattered electrons with high efficiency. These detectors also can record the sum of backscattered and secondary electrons. The primary beam of the microscope is screened from the scintillator high voltage by grids, which also permit switching from the BSE to the (SE + BSE) mode. The circular symmetry of the grids minimizes the influence of applied potentials on the primary beam. The use of the low and high take-off detectors permits the detection of backscattered electrons emitted from the specimen surface into different ranges of take-off angles.

show abstract

Microchannel plate detector for low voltage scanning electron microscopes

Cited by 26 publications

References 0 publications

Critical issues in scanning electron microscope metrology

Critical issues in scanning electron microscope metrology

Specimen biasing to enhance or suppress secondary electron emission from charging specimens at low accelerating voltages,

Detectors for low voltage scanning electron microscopy

Contact Info

Product

Resources

About