Microcircuit machining using focused ion beams—a note on the role of SIMS for end point detection

Prewett, Philip D.; Marriott, Paul; Bishop, H. E.

doi:10.1016/0167-9317(89)90138-x

Cited by 8 publications

(2 citation statements)

References 11 publications

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“…The beam currents were selectable in the range 0.1-22 nA corresponding to a current-dependent spot size of between 10 and 150 nm and were set to give a specific pattern current density J (pA μm −2 ) for the particular experiments described below. The etch rate for the 30 keV Ga + ions used is 0.25 μm 3 nC −1 of beam current, which agrees quite well with the previously measured etch rate of 5 atoms per ion for single crystal silicon [8,15]. The FIB dose controls the final thickness of removed material and the pattern raster times were adjusted to give the correct dose and hence depth for each experiment.…”

Section: Sample Preparationsupporting

confidence: 85%

Effect of focused ion beam milling on microcantilever loss

Anthony¹,

Torricelli²,

Prewett³

et al. 2011

J. Micromech. Microeng.

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Micro-scale cantilevers such as those used in the atomic force microscope are now being applied to the accurate measurement of novel forces such as the Casimir force. The measurements are done in dynamic mode and higher sensitivity can be achieved by using cantilevers with lower force constants. One method to produce a low force constant cantilever is to reduce the thickness of a conventional AFM cantilever by focused ion beam (FIB) milling. Here we show that this method leads to a typical reduction of the resonance quality factor by 40–50%. Reduction of the thickness by FIB milling therefore does not necessarily result in improved force sensitivity, with a decreased quality factor negating any improvement from the lower force constant. If the increased loss is due to the FIB damage layer then it is shown that this layer is ∼30 nm thick and the complex part of Young's modulus of the layer is in the range 205–270 MPa. In the measurements reported here no trend in the quality factor has been observed with either dose rate of the milling or with the total mill depth.

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Section: Sample Preparationsupporting

confidence: 85%

Effect of focused ion beam milling on microcantilever loss

Anthony¹,

Torricelli²,

Prewett³

et al. 2011

J. Micromech. Microeng.

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“…FIB-SIMS can help determine when the cutting process of the repair should be stopped. (Prewett, 1989) The total secondary ion signal can be used to distinguish between a conductive and nonconductive material. Using FIB-SIMS, depth profiles can be obtained at a high aspect ratio (ratio of depth to width), especially when gas assisted etching is used.…”

Section: End Point Detectionmentioning

confidence: 99%

Introduction to Focused Ion Beams

Giannuzzi¹,

Stevie²

2005

537

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Applications of focused ion beams in microelectronics production, design and development

Stevie

Shane

Kahora

et al. 1995

Surface & Interface Analysis

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Focused ion beam (FIB) systems using gallium liquid metal ion sources can remove material with a lateral resolution below 50 nm and can produce metal deposition at a similar resolution with ion beam-enhanced chemical vapour deposition. These capabilities have resulted in many valuable applications for the microelectronics industry. Circuit modifications are possible because existing connections can be severed and reconnected to different locations. Testing of circuitry can be enhanced by isolation of specific circuits, removal of overlayers and by creation of probe pads where desired. Grain sizes can be determined from secondary electron images by the delineation of individual grains due to orientation-dependent channeling of the ion beam. Secondary ion mass spectrometry analyses of small areas can provide ion images, elemental identification of small areas and endpoint detection with depth profiles. Scanning electron microscopy and transmission electron microscopy sections are prepared routinely using the FIB. These FIB-prepared sections are notable because specific features, such as defects, can be exposed and a range of materials including silicon, indium phosphide, gallium arsenide and even metal layers can be cut without distortion. Transmission electron micrographs of superior quality have been obtained with a large area of very uniform thickness that permits identification of features such as areas under stress.

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Microcircuit machining using focused ion beams—a note on the role of SIMS for end point detection

Cited by 8 publications

References 11 publications

Effect of focused ion beam milling on microcantilever loss

Effect of focused ion beam milling on microcantilever loss

Introduction to Focused Ion Beams

Applications of focused ion beams in microelectronics production, design and development

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