Microcructure of Polycrystal Silicon Heated by Sunlight

Olimov, L. O.

doi:10.47191/rajar/v7i11.08

Cited by 3 publications

(9 citation statements)

References 5 publications

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“…It should be noted that the temperature dependence of ρ, µ and n in granular semiconductor particles depends on the charge transfer processes in the particles [13][14][15]. Charge transfer processes in granular particles can be explained as follows depending on the structure of the particles and their charge transfer mechanisms.…”

Section: Resultsmentioning

confidence: 99%

“…It should be noted that in recent years, much attention has been paid to the preparation of thermoelectric materials based on micro-and nano-sized granular semiconductor particles and to the study of their properties [8][9][10][11][12]. Thermoelectric materials made on the basis of granulated semiconductor particles consist of a heterogeneous medium [11,12], parameters σ, α, λ have been observed to depend on the charge transfer process in granulated particles [13][14][15]. In connection with these, it is interesting to study the formation of heterogeneous environment in granulated particles of Mg 3 Sb 2 type and charge transfer processes in them.…”

Section: Introductionmentioning

confidence: 99%

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Charge Transfer Processes In Granulated Mg3Sb2 Particles

o'g'li

Teshaboyevich

2023

Preprint

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In the article, temperature dependence of specific resistance (ρ), concentration of charge carriers (n) and mobility (µ) was studied experimentally at T = 300–700 K to study charge transfer processes in granulated Mg3Sb2 particles. The research results were explained on the basis of the charge transfer mechanism in Mg3Sb2 particles. In particular, at the initial stage of temperature increase, Т≤375 К, localized traps with energy level Ein appear in the interparticle boundary areas of the heated part of the sample. When charge carriers are trapped in them, ρ increases sharply, and n decreases. In the later stages of temperature increase, the thermal phenomenon increases along the length of the sample. In this process, localized traps with energy level Ein appear successively in the interparticle boundary regions located along the length of the sample. In relation to the charges held in them, the concentration of the generated charge carriers n increases in accordance with the increase in temperature, in this case ρ changes steadily. The increase of the potential barrier height in the interparticle boundary regions from ϕ ∼ 0.411 eV to 0.91 eV confirms the above considerations. In addition, under the influence of temperature, the particle size and impurity ionization in the interparticle boundary areas or thermal fluctuations of the crystal lattice decrease the free movement path of the carriers. This leads to a decrease in µ at T = 300–700 K.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Charge Transfer Processes In Granulated Mg3Sb2 Particles

o'g'li

Teshaboyevich

2023

Preprint

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“…1. It is known that the structure and morphology of granulated semiconductor particles depends on the technology of their production [13][14][15][16][17][18][19][20]. For example, the structure of particles obtained on the basis of powder technology can be conditionally divided into 3 parts (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Researches were carried out on the basis of Egor and Disselkhorsta method in the process of temperature change T=300-700 K [20]. This method makes it possible to study charge transfer processes and thermoelectric phenomena during the formation stages of granulated Zn-Sb semiconductor intermetallic compound (see, for example, [13][14][15][16][17][18][19][20] and references therein).…”

Section: Methodsmentioning

confidence: 99%

“…It should also, be noted that in recent years, the interest in preparing granulated semiconductors and obtaining thermoelectric materials based on them, studying their electro physical properties is increasing [13][14][15][16][17][18][19][20]. Production of thermoelectric material based on granulated semiconductors is based on powder technology, which is characterized by its relative simplicity and cost-effectiveness.…”

Section: Introductionmentioning

confidence: 99%

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Obtaining granular semiconductor intermetallic compound Zn-Sb and some of its electrical properties

Olimov,

Akhmadaliev

2023

E3S Web of Conf.

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The article discusses the microstructure of the ZnSb intermetallic compound obtained by powder technology and the results of the study of charge transfer processes in it. Also, the article proposes a method of preparing a Zn-Sb intermetallic compound with a stem-shaped polycrystalline structure using powder technology. Semiconductor Zn-Sb polycrystalline structure preparation method is carried out by pressing Zn-Sb particles together, followed by thermal treatment in several stages. It was found that the stages and temperature of heat treatment have a significant effect on its electrophysical properties. Electrical conductivity (σ), charge carrier concentration (n) suddenly decreases with temperature increase at the initial stage of heat treatment. Such a process is not observed in the subsequent stages of heat treatment. At all stages of heat treatment, the mobility of charge carriers (μ) decreases. In this case, the residence time of charge carriers in the crystal lattice is π~1,52÷1,1·10-12 sec. was determined to change between The results of the study were explained on the basis of the influence of intergranular boundary areas on charge transfer processes. Studies show that at T=300÷700 K, the potential barrier height (φ) in the intergranular boundary areas increases linearly with temperature. For example, φ~0,436 eV at the initial stages of thermal treatment at T=300 K, and φ~0,469 eV at later stages, and at T=700 K, it increases to φ~0,92 eV in all cases. It was shown that it depends on the amount of charges trapped in the localized traps in the intergranular boundary regions.

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Thermoelectric properties of granular Mg3Sb2 particles

Omonboev,

Tishabayevich

2023

E3S Web of Conf.

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This article presents the results obtained in the study of thermoelectric properties of granulated Mg3Sb2 particles. The results of the study show that the thermoelectric properties of granulated Mg3Sb2 particles mainly depend on the physical processes occurring in the interparticle boundary areas. As the temperature increases, the localized traps in the interparticle boundary areas are ionized, and the capture of charge carriers in them leads to a decrease in electrical conductivity (σ). The Seebeck coefficient (α) increases as the temperature difference occurs due to the potential difference and phonon absorption. Also, impurity thermal-voltaic effects appear with the formation of electron-hole pairs in impurity states with an energy level of Ein in the interparticle boundary regions. As a result, the total λ increases at the same time as the thermal conductivity of the two adjacent areas. The convergence of electrical conductivity and potential difference leads to a relatively stable change of λ. These processes lead to a change in the ZT index from ~0.021 to ~1.3 at T=300-700 K.

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Microcructure of Polycrystal Silicon Heated by Sunlight

Cited by 3 publications

References 5 publications

Charge Transfer Processes In Granulated Mg3Sb2 Particles

Charge Transfer Processes In Granulated Mg3Sb2 Particles

Obtaining granular semiconductor intermetallic compound Zn-Sb and some of its electrical properties

Thermoelectric properties of granular Mg3Sb2 particles

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