Microcrystalline SiGe Absorber Layers in Thin-film Silicon Solar Cells

Maydell, Karsten von; Grunewald, K.; Kellermann, Martin; Sergeev, Oleg; Klement, Peter; Reininghaus, Nies; Kilper, T.

doi:10.1016/j.egypro.2013.12.029

Cited by 6 publications

(6 citation statements)

References 6 publications

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“…This was found to stay in good accordance to EDX measurements of μc-SiGe:H films [9]. The optimal germanium content in μc-SiGe:H i-layers was found to be 10% because incorporating more germanium leads to the formation of acceptor like states induced by germanium dangling bond defects that decrease the solar cell performance [10].…”

Section: Methodssupporting

confidence: 69%

Effects of process parameters onμc - Si_{1 − X}Ge_X:H solar cells performance and material properties

et al. 2015

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On our way to develop a very thin and highly efficient triple-junction thin-film solar cell in a-Si:H/µc-Si:H/µc-SiGe:H configuration and µc-SiGe:H single cell samples were prepared and characterized using an industrial relevant 13.56 MHz 0.5 nm/s process on an industrial like 30 × 30 cm 2 PECVD tool. To attain a better understanding of the µc-SiGe:H absorber we varied process pressure, germane flow, dilution and silane flow while looking at the electrical and material properties. By realizing a total absorber thickness less than 2 µm for high efficiency cell concepts in triple technology, our intention is to develop an industrial relevant process with attractive fabrication times by benefiting from the enhanced absorption of µc-SiGe:H compared to µc-Si:H.

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Section: Methodssupporting

confidence: 69%

Effects of process parameters onμc - Si_{1 − X}Ge_X:H solar cells performance and material properties

et al. 2015

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“…The graph clearly shows the higher current density values of the proposed SiGe solar cell are ∼16% higher as compared to crystalline silicon solar cell. The observed J sc and efficiency are also much better as compared to previously reported work [13][14][15]25]. Hence, lower band gap and enhanced absorption by SiGe layer at longer wavelengths have been advantageously combined to improve the PV performance of the device.…”

Section: Resultsmentioning

confidence: 61%

“…The motivation lies within the fact that SiGe alloys exhibited higher absorption coefficient in the nearinfrared portion of sunlight spectrum [13]. Several groups have reportedly fabricated and characterised SiGe solar cells with different SiGe thickness; Liu et al [13] observed 0.75% efficiency for 5 µm SiGe layer, Maydell et al [14] reported 5.5% efficiency, Wang et al [15] observed 14.3%, and Diaz et al [16] recorded 18.9% efficiencies for SiGe-based solar cells developed on silicon. Similarly, solar cells fabricated on thinner silicon substrates have also been reported that offer exciting potential for fabricating the efficient and cost-effective thin-film silicon solar cells [17].…”

Section: Introductionmentioning

confidence: 99%

“…The motivation lies within the fact that SiGe alloys exhibited higher absorption coefficient in the near‐infrared portion of sunlight spectrum [13]. Several groups have reportedly fabricated and characterised SiGe solar cells with different SiGe thickness; Liu , et al [13] observed 0.75% efficiency for 5 µm SiGe layer, Maydell , et al [14] reported 5.5% efficiency, Wang et al . [15] observed 14.3%, and Diaz et al .…”

Section: Introductionmentioning

confidence: 99%

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Design and analysis of an ultra‐thin crystalline silicon heterostructure solar cell featuring SiGe absorber layer

Hussain¹,

Mehmood²,

Khizar

et al. 2018

IET Circuits, Devices & Systems

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Here, the authors studied a silicon-germanium (Si 1−x Ge x) absorber layer for the design and simulation of an ultra-thin crystalline silicon solar cell using Silvaco technology computer-aided design. Seeking ways to design and fabricate solar cells using 100 μm thicker silicon substrates is the subject of intense research efforts among the photovoltaic (PV) community. The aim is to further reduce the substrate thickness to 20 μm without compromising the efficiency of the solar cell. A thin layer of SiGe film with the Ge composition of 15% has been introduced in this work that assists in absorbing the longer wavelength of the sunlight spectrum. The effects of the doping concentration and absorber layer thickness on the conversion efficiency have been examined. The simulated results exhibited significant enhancement in the sunlight absorption as compared to the reference structure based on crystalline silicon. The highest efficiency of 16.8% with an overall solar cell thickness of ∼26 μm has been observed. The proposed heterostructure solar cell design will support the industrial development of an efficient, lowcost, shorter energy payback time, and lightweight PV technology for its widespread implementation.

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“…The most popular techniques for the controlled synthesis of thin layers and nanostructures of Si 1– x Ge x include molecular beam epitaxy using the elements as sources − and the thermal decomposition of SiH 4 /GeH 4 mixtures in chemical vapor deposition (CVD). , In addition, alternative precursors for CVD synthesis such as higher silanes − and dichlorosilane , are reported. Crystal growth of Si 1– x Ge x on Si surfaces also includes the formation of nanodots accompanied by complex bulk and surface diffusion, leading to specific morphologies .…”

Section: Introductionmentioning

confidence: 99%

Mixed-Substituted Single-Source Precursors for Si_1–xGe_x Thin Film Deposition

et al. 2022

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A series of new mixed-substituted heteronuclear precursors with preformed Si–Ge bonds has been synthesized via a two-step synthesis protocol. The molecular sources combine convenient handling with sufficient thermal lability to provide access to group IV alloys with low carbon content. Differences in the molecule–material conversion by chemical vapor deposition (CVD) techniques are described and traced back to the molecular design. This study illustrates the possibility of tailoring the physical and chemical properties of single-source precursors for their application in the CVD of Si1–x Ge x coatings. Moreover, partial crystallization of the Si1–x Ge x has been achieved by Ga metal-supported CVD growth, which demonstrated the potential of the presented precursor class for the synthesis of crystalline group IV alloys.

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Microcrystalline SiGe Absorber Layers in Thin-film Silicon Solar Cells

Cited by 6 publications

References 6 publications

Effects of process parameters onμc - Si_{1 − X}Ge_X:H solar cells performance and material properties

Effects of process parameters onμc - Si_{1 − X}Ge_X:H solar cells performance and material properties

Design and analysis of an ultra‐thin crystalline silicon heterostructure solar cell featuring SiGe absorber layer

Mixed-Substituted Single-Source Precursors for Si_1–xGe_x Thin Film Deposition

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Microcrystalline SiGe Absorber Layers in Thin-film Silicon Solar Cells

Cited by 6 publications

References 6 publications

Effects of process parameters onμc - Si1 − XGeX:H solar cells performance and material properties

Effects of process parameters onμc - Si1 − XGeX:H solar cells performance and material properties

Design and analysis of an ultra‐thin crystalline silicon heterostructure solar cell featuring SiGe absorber layer

Mixed-Substituted Single-Source Precursors for Si1–xGex Thin Film Deposition

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Product

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Effects of process parameters onμc - Si_{1 − X}Ge_X:H solar cells performance and material properties

Effects of process parameters onμc - Si_{1 − X}Ge_X:H solar cells performance and material properties

Mixed-Substituted Single-Source Precursors for Si_1–xGe_x Thin Film Deposition