Microcrystalline silicon.

Matsuda, Akihisa

doi:10.1016/j.jnoncrysol.2004.02.012

Cited by 269 publications

(151 citation statements)

References 48 publications

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“…The 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 [65]. The formation of the microcrystalline phase results from the deposition/etching competition: a much higher deposition rate than etching rate mainly yields the amorphous phase, whereas a deposition rate slightly higher than the etching rate results in the amorphousto-microcrystalline phase transition.…”

Section: Discussionmentioning

confidence: 99%

“…However, all the above cited works deposited microcrystalline silicon at T>230°C. Nevertheless, H 2 , i.e., the hydrogen-dilution ratio R (H 2 /SiH 4 ), has been reported by other groups to be important for aiding the amorphous-to-microcrystalline silicon phase transitions [15,17,[22][23][24][25][26], defects [62,63] and electronic properties [64][65][66][67][68].…”

Section: Relationship Occurring Between the Halogenated (Fluorine) Plmentioning

confidence: 99%

“…During these processes, the effective etching of weakly adsorbed bonds by hydrogen and fluorine atoms can establish the crystalline structure. Although various mechanisms have been proposed to contribute to the amorphous-to-microcrystalline transition [65,72,73], the fluorine-atoms etching contributes mainly to the nano-and micro-crystallinity in SiF 4 -based plasmas [74]. We have previously demonstrated a semi-quantitative correlation between the film crystallinity and the deposition/etching competition [38], which is sketched in Fig.…”

Section: Relationship Occurring Between the Halogenated (Fluorine) Plmentioning

confidence: 99%

See 2 more Smart Citations

From amorphous to microcrystalline silicon: Moving from one to the other by halogenated silicon plasma chemistry

Bruno

Capezzuto

Giangregorio

et al. 2009

Philosophical Magazine

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Section: Discussionmentioning

confidence: 99%

Section: Relationship Occurring Between the Halogenated (Fluorine) Plmentioning

confidence: 99%

Section: Relationship Occurring Between the Halogenated (Fluorine) Plmentioning

confidence: 99%

See 1 more Smart Citation

From amorphous to microcrystalline silicon: Moving from one to the other by halogenated silicon plasma chemistry

Bruno

Capezzuto

Giangregorio

et al. 2009

Philosophical Magazine

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“…5 4 ] ratio. As is well known, atomic hydrogen that reaches a film-growing surface plays an important role in the growth of c-Si:H thin films [22][23][24]. Therefore, we think that by applying higher VHF power, the VHF-HEEPT system provides enough atomic hydrogen to the film-growing surface to cause crystallization of thin-film silicon, even at a [H 2 ]/[SiH 4 ] ratio of 3.3.…”

Section: Physical Properties Of C-si:h Thin Filmsmentioning

confidence: 98%

Application of low hydrogen-diluted and low gaseous-pressure monosilane plasma to fast deposition of solar-cell-grade microcrystalline silicon

Tabuchi

Toyoshima

Fujimoto³

et al. 2016

Trans. Mat. Res. Soc. Japan

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A low hydrogen-diluted and low gaseous-pressure monosilane plasma (hydrogen to monosilane flow rate ratio of 3.3 ≤ [H 2 ]/[SiH 4 ] ≤ 10, 80 Pa) was applied to the fast chemical-vapor deposition of solar-cell-grade hydrogenated microcrystalline silicon (c-Si:H) by using an ultrahigh-vacuum very-high-frequency (105 MHz) hollow-electrode-enhanced glow-plasma transfer technique (VHF-HEEPT). The deposition of a well-crystallized and photosensitive c-Si:H thin film with a preferential <110> crystal orientation was achieved at a growth rate of 5.0 nm/s and a [H 2 ]/[SiH 4 ] ratio of 3.3 by applying a VHF power of 100 W (the highest available power in this work). The same deposition conditions were applied to grow the i (intrinsic)-layer of an n−i−p-type single-junction solar cell. The photo-conversion efficiency of the solar cell was 3.4% with no degradation of the open-circuit voltage (0.44 V) and its fill factor was 54.7%. The crystallographic structure of the solar cell revealed that the i-layer (c-Si:H) consisted of almost the same <110>-preferential crystallite and columnar structure as that of the solar cell, in which the i-layer was deposited under high hydrogen-diluted conditions ([H 2 ]/[SiH 4 ] = 26.7). These results indicate that a low hydrogen-diluted and low gaseous-pressure monosilane plasma is applicable to the fast thin-film deposition of solar-cell-grade c-Si:H by using the VHF-HEEPT system. The depth profiles of phosphorus and oxygen concentrations demonstrated that the i-layer of the solar cells contained larger amounts of these elements than the single i-layer deposited on a glass substrate, especially in the boundary region with the substrate. Further development of both the HEEPT system and film deposition conditions would be effective for improving the performance of solar cells.

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“…[7][8][9][10][11] However, in 2002 a best-cell V oc of 580 mV was reported for c-Si: H solar cells prepared by hot wire deposition. 12 For very high frequency ͑VHF͒ plasma-deposited solar cells a best-cell V oc around 570 mV was reported in 2005 by the application of a hot wire ͑HW͒ deposited buffer layer between the p and i layers.…”

mentioning

confidence: 99%