Microcrystalline silicon n‐i‐p solar cells prepared with microcrystalline silicon oxide (μc‐SiO_x:H) n‐layer

Abstract

N‐type hydrogenated microcrystalline silicon oxide (μc‐SiOx:H) layers were used as window layers in n‐side illuminated microcrystalline silicon n–i–p solar cells. Optical, electrical and structural properties of μc‐SiOx:H films were investigated by Photothermal Deflection Spectroscopy, conductivity and Raman scattering measurements. μc‐SiOx:H layers were prepared over a range of carbon dioxide (CO2) flow and film thickness, and the effects on the solar cell performance were investigated. By optimising the μc‐SiOx:H window layer properties, an improved short‐circuit current density of 23.4 mA/cm2 is achieved, leading to an efficiency of 8.0% for 1μm thick absorber layer and Ag back contact. The correlation between cell performance and μc‐SiOx:H layer properties is discussed. The results are compared to the performance of solar cells prepared with alternative optimised window layers. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Microcrystalline silicon oxide (μc-SiOx:H) alloys: A versatile material for application in thin film silicon single and tandem junction solar cells

“…As a wide optical gap material, microcrystalline silicon oxide (μc-SiO x :H) has been the subject of research as a material for photovoltaic applications [1][2][3][4][5][6][7][8]. The properties of μc-SiO x :H thin films are influenced by the doping and the oxygen content.…”

Hydrogenated amorphous silicon oxide containing a microcrystalline silicon phase and usage as an intermediate reflector in thin-film silicon solar cells

“…[11][12][13][14][15][16][17] Furthermore, the material is a potential candidate for the use as window layer due to its combination of sufficient conductivity and high bandgap. 18 Here, we present a detailed description of the lc-SiO x :H material development, with a focus on the relationship between the deposition parameters and the material properties. Guidelines for selection of material with desired properties as intermediate reflector are described and the successful application in thin-film silicon solar cells is demonstrated with a possible top cell thickness reduction by 40% while maintaining the total tandem cell current.…”

Improved hetero-interface passivation by microcrystalline silicon oxide emitter in silicon heterojunction solar cells

“…Similar to the lc-Si:H, the lc-SiO x :H not only has the potential of high doping level and conductivity, but also can widen the optical band gap by introducing oxygen and effectively reduce the inherent blue light loss in window layer [14][15][16][17][18]. Therefore, lc-SiO x :H is currently widely used as intermediate reflector for thin-film silicon solar cells and buffer/emitter layer for SHJ solar cells [17,18].…”

“…Therefore, lc-SiO x :H is currently widely used as intermediate reflector for thin-film silicon solar cells and buffer/emitter layer for SHJ solar cells [17,18]. However, the microstructures and photoelectric properties of lc-SiO x :H are closely related to its growth process.…”