1996
DOI: 10.1557/proc-452-883
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Microcrystalline Silicon Solar Cells at Higher Deposition Rates by the VHF-GD

Abstract: A 7.7 % single junction cell efficiency for an entirely microcrystalline silicon (µc-Si:H) device has recently been reported by our group [1]. This was achieved by applying the purifier technique, a technique which is indeed easier to handle than the earlier used "microdoping" approach. The purpose of the present paper is twofold: First to show in detail the impact on device performance when a gas purifier is used; and second to illustrate that the deposition rate of the active, absorbing i-layer can be increa… Show more

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Cited by 10 publications
(5 citation statements)
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“…Preliminary work was done by Lucovsky et al [4], and Faraji et al [5]. Subsequently, our group successfully pioneered [6][7][8] entirely microcrystalline pin-and nip-type silicon solar cells fabricated with the very high frequency (VHF) glow discharge method, thereby rapidly attaining AM 1.5 efficiencies higher than 7% [9,10]. Since then, this type of solar cell has been developed further, by our own group and by many other research groups, using different fabrication techniques for the microcrystalline layers.…”
Section: Introductionmentioning
confidence: 99%
“…Preliminary work was done by Lucovsky et al [4], and Faraji et al [5]. Subsequently, our group successfully pioneered [6][7][8] entirely microcrystalline pin-and nip-type silicon solar cells fabricated with the very high frequency (VHF) glow discharge method, thereby rapidly attaining AM 1.5 efficiencies higher than 7% [9,10]. Since then, this type of solar cell has been developed further, by our own group and by many other research groups, using different fabrication techniques for the microcrystalline layers.…”
Section: Introductionmentioning
confidence: 99%
“…Looking at the deposition rates of µc-Si:H, the VHF-GD process in itself brings sofar at least some improvement, as reported by Finger et al (15). Attempts at obtaining yet higher deposition rates are described by Torres et al (16). In this paper we present an alternative approach using argon plus hydrogen dilution of silane.…”
Section: Limits and Potential For Further Improvementsmentioning
confidence: 66%
“…The purifier technique [4,5] was always applied when depositing the i-layers to avoid the incorporation of the detrimental oxygen contamination which usually results in n-type layers and, thus, in poor device performances. Other deposition parameters can be found elsewhere [18]. Under these conditions, about 2 µm thick films were deposited on glass substrates (AF45 Schott) and on double-sided polished <100> Si wafers.…”
Section: Methodsmentioning
confidence: 99%
“…Furthermore, an immediate transfer on opaque substrates, such as aluminium, stainless steel, etc. is quite straightforward [18,19]. The thickness measurement was done as close as possible to the active cell area with a surface profiler (Alpha Step 200 from Tencor Instruments).…”
Section: Methodsmentioning
confidence: 99%