Microdosimetric Aspects of Proton-Induced Nuclear Reactions in Thin Layers of Silicon

Farrell, G.; McNulty, P.J.

doi:10.1109/tns.1982.4336488

Cited by 42 publications

(6 citation statements)

References 20 publications

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“…Over the course of time, the increased understanding of radiation interactions [10,11] and energy deposition processes have helped to extend the sensors with improved response coupled with new design techniques [12][13][14][15] . From the early 1980s, the theory of microdosimetry [16,17], particularly dealing with very low dose-level effects on microelectronics, was explored and studied with an emphasis on radiation oncology applications [18].…”

Section: Introductionmentioning

confidence: 99%

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

et al. 2021

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This article provides a review of semiconductor based ionising radiation sensors to measure accumulated dose and detect individual strikes of ionising particles. The measurement of ionising radiation (γ-ray, X-ray, high energy UV-ray and heavy ions, etc.) is essential in several critical reliability applications such as medical, aviation, space missions and high energy physics experiments considering safety and quality assurance. In the last few decades, numerous techniques based on semiconductor devices such as diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs) and solid-state photomultipliers (SSPMs), etc., have been reported to estimate the absorbed dose of radiation with sensitivity varying by several orders of magnitude from μGy to MGy. In addition, the mitigation of soft errors in integrated circuits essentially requires detection of charged particle induced transients and digital bit-flips in storage elements. Depending on the particle energies, flux and the application requirements, several sensing solutions such as diodes, static random access memory (SRAM) and NAND flash, etc., are reported in the literature. This article goes through the evolution of radiation dosimeters and particle detectors implemented using semiconductor technologies and summarises the features with emphasis on their underlying principles and applications. In addition, this article performs a comparison of the different methodologies while mentioning their advantages and limitations.

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Section: Introductionmentioning

confidence: 99%

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

et al. 2021

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“…However, some valuable measurements have been made for proton or neutron upset rates, in part because of interest in the upsets caused by neutrons from special weapons, and to explain measurements from upset rates in the Van Allen Belt from protons. Examples of such work may be found in References [3][4][5][6][7][8][9][10][11][12][13][14][15] or in review papers [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Accelerated testing for cosmic soft-error rate

et al. 1996

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This paper describes tlie experimentai tecliniques wliich have been developed at IBIM to determine the sensitivity of electronic circuits to cosmic rays at sea level. It relates IBM circuit design and modeling, chip manufacture with process variations, and chip testing for SER sensitivity. This vertical integration from design to final test and with feedback to design allows a complete picture of LSI sensitivity to cosmic rays. Since advanced computers are designed with LSI chips long before the chips have been fabricated, and the system architecture is fully formed before the first chips are functional, it is essential to establish the chip reliability as early as possible. This paper establishes techniques to test chips that are only partly functional (e.g., only 1Mb of a 16Mb memory may be working) and can establish chip soft-error upset rates before final chip manufacturing begins. Simple relationships derived from measurement of more than 80 different chips manufactured over 20 years allow total cosmic soft-error rate (SER) to be estimated after only limited testing. Comparisons between these accelerated test results and similar tests determined by "field testing" (which may require a year or more of testing after manufacturing begins) show that our experimental techniques are accurate to a factor of 2.

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“…The CUPID (Clarkson University Proton Interactions in Devices) codes have been shown to accurately predict the charge generation in fully depleted Si surface-barrier detectors over a wide range of incident proton energies where the thickness of the detectors was varied from 2.5 to 97 pum (1)(2)(3). However, the codes have never been proven to work for GaAs devices nor have they been tested against measurements with partially depleted structures in either GaAs or silicon.…”

Section: Introductionmentioning

confidence: 99%

“…field-assisted drift. The number of such intersectReference 6 reports a single measured threshold LET ing recoils resulting from simulated exposures to of 1.8 HeY cm 2 /ug and a flat SZU cross section of given fluences of protons are listed in row 5 of 2000 um 2 for ion@ having higher LETs. The sensitive Table 2 for five different proton energies.…”

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confidence: 99%

Nuclear Reactions in GaAs and Si and Their Role in the Single Event Upset Problem

McNulty¹

1988

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Microdosimetric Aspects of Proton-Induced Nuclear Reactions in Thin Layers of Silicon

Cited by 42 publications

References 20 publications

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

Accelerated testing for cosmic soft-error rate

Nuclear Reactions in GaAs and Si and Their Role in the Single Event Upset Problem

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