Microelectronic Test Chips for VLSI Electronics

Buehler, M.

doi:10.1016/b978-0-12-234106-9.50014-3

Cited by 30 publications

(7 citation statements)

References 24 publications

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“…In addition, certain critical parameters relating to product performance may require more sophisticated (non-automated) test methods. Buehler [1983] identifies six use categories of test structures. TERRY-2 was designed to address only two of these areas judged to be key ones for CCD performance and process control: device parameters and process parameters, including processed materials properties.…”

Section: Measurement Program and Test Results Evaluationmentioning

confidence: 99%

“…The particular strategy chosen to implement the TERRY-2 test chi p as j-art of a comprehensive testing program depends on a variety of factors assoc i a t.o, i with the performance of the fabrication process [Carver, 1980;Buehler, 1983], Some of these factors and their implications regarding test strategy are discussed in the next section.…”

Section: Test Structure Measurement Proceduresmentioning

confidence: 99%

“…In a method described by Buehler [1983], following a procedure proposed by Ham [1980], eight drain current measurements are made to determine seven device parameters which characterize the linear and saturation portions of the MOSFET currentvoltage operating characteristics. The determined device parameters are the threshold voltage, conduction factor, and transconductance, each measured in the linear and in the saturated regions, and also the output conductance in the saturation region.…”

Section: Test Structure Measurement Proceduresmentioning

confidence: 99%

“…Also, use of this definition requires additional knowledge to assure the particular transistor is operating properly; for example, it must be known that there is no significant gate-leakage current or that the drain-substrate junction breakdown voltage is not exceeded. A definition based on a two-point procedure involving linear extrapolation to zero current [Buehler, 1983] requires additional measurement time, but provides greater assurance that the determined value is reliable. Alternatively, ASTM Standard Method F 617-79, "Measuring MOSFET Linear Threshold Voltage," requires measurement of several values of drain current for different gate voltages, at a fixed drain voltage, to determine the maximim slope of the drain current-gate voltage curve.…”

Section: Test Structure Measurement Proceduresmentioning

confidence: 99%

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Terry-2 :

Carver¹,

Wachnik²

1984

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Capture and emis'-ion processes during charge pumping cn a p-type sub«t ''a i_e v PREFACE This work was conducted as a part of the Semiconductor Technology Program at the National Bureau of Standards (NBS).This program serves to focus NBS research to enhance the performance, interchangeability, and reliability of discrete semiconductor devices and integrated circuits through improvements in measurement technology for use in specifying materials and devices in national and international commerce and for use by industry in controlling device fabrication processes.This research leads to carefully evaluated and well-documented test procedures and associated technology. Special emphasis is placed on the dissemination of the results of the research to the electronics community. Application of these results by industry will contribute to higher yields, lower cost, and higher reliability of semiconductor devices.Improved measurement technology also leads to greater economy in government procurement by providing a common basis for the purchase specifications of government agencies and, in addition, provides a basis for controlled improvements in fabrication processes and in essential device characteristics .The segment of the Semiconductor Technology Program described in this report was supported by The Charles Stark Draper Laboratory, Inc. (CSDL) under CSDL Prime Contract N00030-81 -C-01 33 issued by the Department of the Navy, Strategic Systems Project Office. CSDL's purchase Order Number DL-H-2081 37 covered work at NBS for the period December 1, 1982 through November 30, 1983. Work was monitored by Mr. Robert E. Var of CSDL. The NBS contacts for technical information on this project are Gary P. Carver and Richard A. Wachnik of the Semiconductor Materials and Processes Division at the National Bureau of Standards, (301) 921-3786.

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Section: Measurement Program and Test Results Evaluationmentioning

confidence: 99%

Section: Test Structure Measurement Proceduresmentioning

confidence: 99%

Section: Test Structure Measurement Proceduresmentioning

confidence: 99%

Section: Test Structure Measurement Proceduresmentioning

confidence: 99%

See 2 more Smart Citations

Terry-2 :

Carver¹,

Wachnik²

1984

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show abstract

“…Test methods performed after a particular process step or after all processing is completed, using test vehicles that are primarily electrically addressed devices, can be most valuable because they can be automated. The test devices, or test structures, should be composite structures whose design requires careful consideration and integration with the process [7].…”

Section: Test Methodologymentioning

confidence: 99%