Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon

The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon

“…probe square-array test structure [30] as discussed in a previous paper [20]. The results are compared with the theoretical calculations.…”

Semiconductor measurement technology

“…The capacitor used was structure 3.8 of test pattern NBS-3 [28]. The peripheral gate was biased into accumulation (-25 V) (20a) and the resulting expressions are substituted into eq (23) and simplified, the left-hand side of eq (23) is seen to be a ratio of capacitances, denoted…”

“…Electrical measurements of net carrier density and resistivity were made on a companion wafer on which test pattern NBS-3 [28] had been fabricated. The net carrier density (equal to the boron density less the compensating donor impurity density) was found to be 2.22 ± 0-05 x 10^ĉ m~^from junction C-V measurements on five diodes.…”

“…Since the sheet resistance as measured with the bridge structure depends on the length-towidth ratio of the bridge while that as measured with the van der Pauw structure does not, it is possible to determine the width of the bridge structure as well as the sheet resistance by combining electrical measurements from these two structures provided the actual sheet resistances of both structures are identical [28].…”

Measurement techniques for solar cells, Annual report December 15, 1978 to December 14, 1979

“…Photoresponse map to 0.633-ym light of an early low-cost EFG cell with 500-mA forward bias 9 6. Photoresponse of an EFG cell near a silicon carbide particle producing a point shunt through the cell indicated by the reduced signal as the laser spot approaches the particle 10 7. Predicted photoresponse of a cell with a point shunt located at 0.5 (dotted lines) compared to a perfect cell (solid lines) ... Line scan through the region of a cell where a silicon carbide particle is producing a point shunt 12 9. Line scan in the region of a cell when a silicon carbide particle has not produced a shunt through the cell 12 10. Raster scan of an EFG cell under a few suns light bias to identify a hairline crack between the second and third metallization finger from the left 13 11. Line scan of the cracked region of the cell in figure 10 ... . 13 12. Expanded line scan of the previous cell before the crack has spread to the bus bar metallization 14 13. Same cell as in figure 12 at a later time when the crack has interrupted the flow of current along the bus bar 15 14. Line scan adjacent to the bus bar showing the reduction in photoresponse due to the crack 15 15. Photoresponse of a high quality 1-cm by 4-cm EFG cell 16 16. Cell of figure 15 under about 3 suns light bias 16 17. Cell of figure 15 under no light bias but with 1. 15- Raster scan of most of an NBS-22 solar cell using the configuration of figure 23 in the large area scan mode of figures 25 specimens yielded values of the effective minority carrier diffusion length in the Zn 2 P 2 in satisfactory agreement with the results obtained using other techniques.…”