Microelectronics, Nanoelectronics: step behind the red brick wall using the thermal domain

Mizsei, J.; Lappalainen, Jyrki

doi:10.1016/j.matpr.2018.12.089

Cited by 1 publication

(3 citation statements)

References 8 publications

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“…If the dissipated power decreases (the resistance decreases) then it can switch back, which shows a jump back to the original path. This phenomenon also appears in other structures, for example in [40], the lateral structure with two Pt contacts are directly attached to VO 2 , no Si substrate is interposed.…”

Section: Resultsmentioning

confidence: 68%

“…Voltage (V) The starting point of the study is to simulate the geometry in Figure 7 using the real size of produced sample in laboratory (r = 10 µm, h = 50 nm). The low-current section of the measured curve is strongly nonlinear, which did not occur in case of lateral SMT resistors [40,41]. The main difference between the current vertical structure and the previously studied lateral structures is that in lateral structures the platinum anode and cathode were directly attached to VO 2 , while in the vertical structure the silicon substrate was inserted between the cathode and VO 2 .…”

Section: Resultsmentioning

confidence: 91%

“…Previously, we studied lateral structures by performing high-resolution electro-thermal simulations using a range of different dimensions [39]. Measurement results for lateral TELC structures are also available in [40].…”

mentioning

confidence: 99%

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Electro-Thermal Simulation of Vertical VO2 Thermal-Electronic Circuit Elements

et al. 2020

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Advancement of classical silicon-based circuit technology is approaching maturity and saturation. The worldwide research is now focusing wide range of potential technologies for the “More than Moore” era. One of these technologies is thermal-electronic logic circuits based on the semiconductor-to-metal phase transition of vanadium dioxide, a possible future logic circuits to replace the conventional circuits. In thermal-electronic circuits, information flows in a combination of thermal and electronic signals. Design of these circuits will be possible once appropriate device models become available. Characteristics of vanadium dioxide are under research by preparing structures in laboratory and their validation by simulation models. Modeling and simulation of these devices is challenging due to several nonlinearities, discussed in this article. Introduction of custom finite volumes method simulator has however improved handling of special properties of vanadium dioxide. This paper presents modeling and electro-thermal simulation of vertically structured devices of different dimensions, 10 nm to 300 nm layer thicknesses and 200 nm to 30 μm radii. Results of this research will facilitate determination of sample sizes in the next phase of device modeling.

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Section: Resultsmentioning

confidence: 68%

Section: Resultsmentioning

confidence: 91%