Microfabrication of Si-Based High-Index-Contrast-Grating Structure by Thermal Nanoimprint Lithography and Cl₂/Xe-Inductively Coupled Plasma Etching

Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask

“…The residual layer was removed by O 2 plasma using a reactive ion etching (RIE) system (Samco RIE-1). 26) As confirmed by SEM, a good transcriptional profile (square aperture patterns) of the quartz mold was obtained. Figure 3 TripC 12 film would become a useful Cl 2 -based dry etching mask for the nanoscale fabrication of semiconductors upon optimizing the nanoimprint lithography conditions.…”

“…Instead, the resistivity of polymers against reactive plasma is very important for this process. 14) In general, polymers are structurally flexible and adopt complex random structures. In future nanolithography, accurate fine patterning of resist materials will be required.…”