Microfluidic cooling for GaN electronic devices

Erp, Remco van; Matioli, Elison

doi:10.1016/b978-0-12-821084-0.00013-5

Thermal Management of Gallium Nitride Electronics 2022

DOI: 10.1016/b978-0-12-821084-0.00013-5

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Microfluidic cooling for GaN electronic devices

Remco van Erp¹,

Elison Matioli²

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2024

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Cited by 3 publications

References 33 publications

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Comprehensive review and future prospects on chip-scale thermal management: Core of data center’s thermal management

Li,

Luo,

Jiang

et al. 2024

Applied Thermal Engineering

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Comprehensive review and future prospects on chip-scale thermal management: Core of data center’s thermal management

Li,

Luo,

Jiang

et al. 2024

Applied Thermal Engineering

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Embedded Microfluidic Cooling with Energetic Electrolytes for the GaN Device: A Feasibility and Adaptability Investigation

Zhang,

Chen,

Zhu

et al. 2024

ACS Appl. Electron. Mater.

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As gallium nitride (GaN) high electron mobility transistors advance toward compactness, effective thermal management is critical to maintaining their operational reliability. A synergistic embedded cooling integration system for high-power devices has been proposed, utilizing energetic electrolytes as the coolant. This study reports a comprehensive feasibility and adaptability investigation of the vanadium-based electrolyte microfluidic cooling across five real GaN devices (GS61004B, GS66502B, GS66504B, GS6504-1L, and GS6508-1L). Experimental results demonstrated that the proposed embedded microfluidic cooling effectively reduced the average surface temperature of GaN devices to below 45 °C at a flow rate of 10 mL/min, with hotspot temperatures dropping by over 14% in all tested models. The GS66502B model, in particular, exhibited a 29% reduction in hotspot temperature. Furthermore, the embedded microfluidic cooling strategy improved the electrical characteristics of the devices, increasing output current by an average of 27%, with a 44% improvement observed in model GS6508-1L, thereby preventing power degradation caused by overheating. The system also demonstrated a maximum coefficient of performance of 18,700 at a flow rate of 2 mL/min. This study validates the effectiveness of the proposed embedded microfluidic cooling and offers valuable insights for future highpower density electronics.

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In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l

van Erp,

Perera,

Nela

et al. 2024

IEEE Trans. Power Electron.

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Microfluidic cooling for GaN electronic devices

Cited by 3 publications

References 33 publications

Comprehensive review and future prospects on chip-scale thermal management: Core of data center’s thermal management

Comprehensive review and future prospects on chip-scale thermal management: Core of data center’s thermal management

Embedded Microfluidic Cooling with Energetic Electrolytes for the GaN Device: A Feasibility and Adaptability Investigation

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l

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