2018
DOI: 10.1016/j.ceramint.2018.06.245
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Micromachining of 4H-SiC using femtosecond laser

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Cited by 47 publications
(12 citation statements)
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“…predicted the influence of these variables by establishing a mathematical model of the depth and width dimensions of microgrooves, which was experimentally verified to have an average error of only about 1.3%, so the correctness of the model can be guaranteed. [ 49 ] The results show that the microgroove depth and surface roughness are positively correlated with the laser power, pulse repetition rate, and scanning speed. The group also studied the evolution of femtosecond laser‐irradiated SiC from micro nanostructures to V‐grooves and analyzed the material removal mechanism and morphology control methods.…”
Section: Microchannel Structuresmentioning
confidence: 99%
“…predicted the influence of these variables by establishing a mathematical model of the depth and width dimensions of microgrooves, which was experimentally verified to have an average error of only about 1.3%, so the correctness of the model can be guaranteed. [ 49 ] The results show that the microgroove depth and surface roughness are positively correlated with the laser power, pulse repetition rate, and scanning speed. The group also studied the evolution of femtosecond laser‐irradiated SiC from micro nanostructures to V‐grooves and analyzed the material removal mechanism and morphology control methods.…”
Section: Microchannel Structuresmentioning
confidence: 99%
“…In past decades, femtosecond laser micromachining has been considered a superior material processing tool, capable of generating complex geometries without photomasks and cleanroom facilities, enabling the processing of materials in different atmospheres, as well as in a vacuum. Various targets are feasible to be ablated by the femtosecond laser irradiation [70][71][72]. Even diamond, with Mons' hardness scale of 10, can be processed [73].…”
Section: Femtosecond Laser Fabrication In Microscale (1 ~100 μM)mentioning
confidence: 99%
“…Tsibidis et al used an optimized two-temperature model to study the dynamics of excited carriers during femtosecond laser ablation of silicon carbide and theoretically calculated the surface damage threshold of silicon carbide materials [11]. Zhang et al used a femtosecond laser to etch the surface of a 4H-SiC wafer, obtained smooth micro-groove sidewalls, and analyzed the heat-affected zone and material oxidation effect [20]. Rehman et al found that amorphous silicon (a-Si) and amorphous carbon (a-C) appeared in the area after femtosecond laser ablation of 4H-SiC, and dislocations and deformations appeared in the crystal structure, indicating that the silicon carbide single-crystal material under laser ablation is subject to a certain degree of thermal stress [21].…”
Section: Introductionmentioning
confidence: 99%