Micromachining of Al2O3 thin films via laser drilling and plasma etching for interfacing copper

Dogan, Gül; Chiu, Frank Po‐Chao; Chen, Sam U.H.; David, Mebil R.T.; Michalowski, Andreas; Schänzel, Michael; Silber, C.; Schütz, Gisela; Grévent, Corinne; Keskinbora, Kahraman

doi:10.1016/j.matdes.2021.110114

Cited by 5 publications

(1 citation statement)

References 67 publications

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“…However, relevant researches are only focused on the case of single defect. Moreover, as the MEMS (Micro-Electro-Mechanical System) highly developed into nano-scale, the group of surface pit defects is becoming a common practice in the bulk micromachining [ 16 , 17 , 18 , 19 ], especially in the dry etching field [ 20 , 21 ]. So it is in great significance to simulate the thin film with surface multi-defects; however, relevant investigations on this aspect are still rare to see.…”

Section: Introductionmentioning

confidence: 99%

Synergy Effect and Symmetry-Induced Enhancement Effect of Surface Multi-Defects on Nanohardness by Quasi-Continuum Method

Zhang

Wang

2022

Materials

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The quasicontinuum method has been applied to probe the thin film with surface multi-defects, which is commonly seen in nanoimprint technique and bulk micromachining. Three unilaterally distributed multi-defect models and six bilaterally distributed multi-defect models of Pt thin film have been carried out in nanoindentation. The results show that the nanohardness gradually decreases as the number of unilaterally distributed multi-defects increases, along with the increasingly low decline rate of the nanohardness. The synergy effect of the unilaterally distributed multi-defects has been highly evidenced by the critical load revision for dislocation emission of Pt thin film, and it is predicted into a universal form with the synergy coefficient among the existing multi-defects for FCC metals. Moreover, the nanohardness obviously increases when the bilaterally distributed multi-defects form into symmetrical couple, and it could be even greater than the one with defect-free surface, due to the symmetry-induced enhancement effect on nanohardness. The symmetry-induced enhancement coefficient has been brought out and has well explained the symmetry-induced enhancement effect of bilaterally distributed multi-defects on the nanohardness by a prediction formula. Furthermore, the characteristic length of symmetric relations has been brought out to calculate the symmetry-induced enhancement coefficient and it has been effectively predicted to equal to the sum of the adjacent distance between the surface defect and the indenter, the defect depth near the indenter, and the defect width for FCC metal.

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