1999
DOI: 10.1063/1.1149666
|View full text |Cite
|
Sign up to set email alerts
|

Micron-sized Hall probes on a Si/SiGe heterostructure as a tool to study vortex dynamics in high-temperature superconducting crystals

Abstract: Weak localization and charge-carrier interaction effects in a two-dimensional hole gas in a germanium quantum well in a Si

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
6
0

Year Published

2003
2003
2016
2016

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 8 publications
(6 citation statements)
references
References 10 publications
0
6
0
Order By: Relevance
“…More recently high sensitivity and spatial resolution have been achieved with GaAs/Al x Ga 1−x As heterojunction structures [79,80,81,82,83,84]. In addition, 250 nm sized scanning probes using GaSb/InAs/GaSb [83], and micron-scale Si/SiGe and InGaAs/InP Hall crosses have been characterized at low temperatures [85,86]. Hicks et al [87] have fabricated Hall bars as small as 85 nm on a side (see Fig.…”
Section: Hall Bar Microscopymentioning
confidence: 99%
See 1 more Smart Citation
“…More recently high sensitivity and spatial resolution have been achieved with GaAs/Al x Ga 1−x As heterojunction structures [79,80,81,82,83,84]. In addition, 250 nm sized scanning probes using GaSb/InAs/GaSb [83], and micron-scale Si/SiGe and InGaAs/InP Hall crosses have been characterized at low temperatures [85,86]. Hicks et al [87] have fabricated Hall bars as small as 85 nm on a side (see Fig.…”
Section: Hall Bar Microscopymentioning
confidence: 99%
“…More recently high sensitivity and spatial resolution have been achieved with GaAs/Al x Ga 1−x As heterojunction structures [79][80][81][82][83][84]. In addition, 250 nm sized scanning probes using GaSb/InAs/GaSb [83] and micrometerscale Si/SiGe and InGaAs/InP Hall crosses have been characterized at low temperatures [85,86]. Hicks et al [87] have fabricated Hall bars as small as 85 nm on a side (see figure 5) from GaAs/Al x Ga 1−x As heterojunction electron gas material, and estimate a field noise of 500 µT Hz −1/2 and a spin sensitivity of 1.2 × 10 4 µ B Hz −1/2 at 3 Hz and 9 K for sensors 100 nm on a side.…”
Section: Hall Bar Microscopymentioning
confidence: 99%
“…7 Micron-scale Si/ SiGe and InGaAs/ InP Hall crosses have been characterized at low temperature but have not been incorporated into scanning probes. 8,9 The Hall signal is V = I͑R offset + R H B z ͒, where B z is the average perpendicular field at the Hall cross, I is the drive current, R H =1/ne is the Hall coefficient ͑n is the 2D carrier density͒, and R offset is due to lithography imperfections or asymmetrical current flow. Useful systems offer low n ͑for large R H ͒ and high mobility ͑for higher conductance, reducing Johnson noise, and allowing higher drive current͒.…”
mentioning
confidence: 99%
“…In recent years, several magnetic imaging tools emerged, like e.g. magnetic resonance force sensors [5], sensors based on nitrogen vacancy defects in diamond [6], and Hall [7] or SQUID type sensors [8]. Although the latter are one of the most sensitive devices for measuring magnetic flux, their usual optimization with respect of field sensitivity or current resolution leads to devices with dimensions of several m to mm and are therefore not well adapted to the task of measuring small spin systems.…”
Section: Introductionmentioning
confidence: 99%