Micropatterning of Ferroelectric Bi ₄Ti ₃O ₁₂ Using Electron-Beam-Induced Reaction of Metal Octylate Films

Abstract

Zn 1Àx Mn x )O diluted magnetic semiconductors (DMSs) grown on (0001) Al 2 O 3 substrates by radio frequency magnetron sputtering were investigated with the aim of producing a material with a high ferromagnetic transition temperature (T c ). X-ray diffraction, photoluminescence, and Hall-effect measurements showed that the grown (Zn 1Àx Mn x )O thin films were p-type crystalline semiconductors with single phases. Magnetization curve as a function of magnetic field at 5 K indicated that ferromagnetism existed in the (Zn 1Àx Mn x )O thin films, and magnetization curve as a function of temperature showed that the T c of the (Zn 0:93 Mn 0:07 )O thin film was 70 K. These observations can improve the understanding of the increase in T c for (Zn 1Àx Mn x )O DMSs grown on (0001) Al 2 O 3 substrates.

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

“…YBa2Cu3normalO7 was the earliest oxide that was patterned using a mixture of metal naphthenates 116 . Several subsequent reports thereafter utilized submicron direct-write capabilities of metal naphthenates, 117 octylates, 118 and ethylhexanoates 119 , 120 to fabricated ferroelectric oxide patterns. Kiyohara et al.…”

“…YBa 2 Cu 3 O 7 was the earliest oxide that was patterned using a mixture of metal naphthenates. 116 Several subsequent reports thereafter utilized submicron direct-write capabilities of metal naphthenates, 117 octylates, 118 and ethylhexanoates 119,120 to fabricated ferroelectric oxide patterns. Kiyohara et al exploited the high etch resistance of the electron beam direct-write patterned metal octylates for pattern transfer into CVD diamond films.…”

Fabrication of Ferroelectric Microstructures by Electron-Beam-Induced Patterning Process

“…The conventional photolithography process and electron-beam lithography are commonly used to fabricate ferroelectric micropatterns, however degradation of electrical and ferroelectrical properties of the films would be occurred due to relatively high defect density on the sidewalls caused by the plasma damage in etching sequences. Electron-beam-induced (EBI) patterning process [1][2][3][4] is one of the candidates for overcoming that degradation problem, because spin-coated precursor films were directly patterned by EB first, following by development and heat treatment of the films. If the films were damaged by the EB irradiation or in the developer solutions, those damaged parts may be improved simultaneously in one heat treatment for crystallization, while conventional patterning processes after the film growth require two times of relative high temperature of heat treatment; film growth and recovery annealing.…”

Preparation of PbZr Ti1−O3 nanostructures on various substrates by MOCVD

“…One is the top-down approach, such as electron beam direct writing [1,2], electron beam lithography [3], focused ion beam milling [4,5] and imprint lithography [6]. The other is the bottom-up approach, such as the self-assembled process [7] and the self-patterning process [8,9].…”