Microphotoluminescence of oval defects in a GaAs layer grown by molecular beam epitaxy

Kasai, Junichi; Kawata, M.

doi:10.1063/1.122352

Cited by 11 publications

(12 citation statements)

References 12 publications

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“…The dimensions of oval defects are of order several µm [21,22], thus very similar to the size of the islands determined from the µ-PL mapping experiment. The density of such defects may be as low as 10 5 cm −2 , which explains the possibility of observing sharp emission lines even in macro-luminescence experiments.…”

Section: Nature Of the Objects Responsible For Sharp Emission Linessupporting

confidence: 52%

“…For gallium composition below 0.3 we expect that the islands will no longer behave like indirect objects but will serve as centers of direct recombination which capture diffusing excitons. One can expect that the formation of such islands can be favored in the vicinity of extended defects such as dislocation loops, intrinsic point [18] and/or oval defects with enhanced concentration of gallium [21,22].…”

Section: Nature Of the Objects Responsible For Sharp Emission Linesmentioning

confidence: 99%

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Emission from Mesoscopic-Size Islands Formed in a GaAs/AlAs Double Layer Structure

et al. 2004

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The nature of sharp emission lines which are present in macro--luminescence experiments on a type-II GaAs/AlAs double quantum well structure is discussed. The experiments, which also include micro-luminescence measurements, allowed us to conclude that the sharp emission lines observed originate from lateral GaAlAs islands of a few µm in diameter. They serve as efficient type-I recombination centers for indirect excitons and/or carriers which diffuse in the GaAs/AlAs QW structure and strongly affect the emission processes observed in macro-luminescence experiments. These traps can easily be filled with electron-hole pairs, giving rise to the formation of neutral excitons as well as more complex excitonic molecules. Magnetoluminescence spectra from single islands resemble those observed for natural quantum dots formed in narrow GaAs quantum wells.

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Section: Nature Of the Objects Responsible For Sharp Emission Linessupporting

confidence: 52%

Section: Nature Of the Objects Responsible For Sharp Emission Linesmentioning

confidence: 99%

Emission from Mesoscopic-Size Islands Formed in a GaAs/AlAs Double Layer Structure

et al. 2004

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“…Surprisingly, this quenching seems unrelated to the surface oval defects, visible in Fig. 1(g)-(h), which only occur on the left and right stacking faults [20]. Thus surface oval defects do not significantly affect the strength of non-radiative recombination occurring at the intersection of a stacking fault and the sample surface.…”

Section: B Photoluminescence Imagingmentioning

confidence: 84%

Optical visualization of radiative recombination at partial dislocations in GaAs

Karin

Linpeng

Ashish

et al. 2016

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

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Abstract-Individual dislocations in an ultra-pure GaAs epilayer are investigated with spatially and spectrally resolved photoluminescence imaging at 5 K. We find that some dislocations act as strong non-radiative recombination centers, while others are efficient radiative recombination centers. We characterize luminescence bands in GaAs due to dislocations, stacking faults, and pairs of stacking faults. These results indicate that lowtemperature, spatially-resolved photoluminescence imaging can be a powerful tool for identifying luminescence bands of extended defects. This mapping could then be used to identify extended defects in other GaAs samples solely based on low-temperature photoluminescence spectra.

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“…The stacking faults are embedded in the GaAs epitaxial layer which is grown on a (100)-terminated GaAs substrate. The location of the faults are identified by oval defects at the surface [12]. The geometry of the cross-section with respect to the structure is shown in the insets of Fig.…”

Section: Structural Imaging Of Single and Double Stacking Faultsmentioning

confidence: 99%

Microscopic model for the stacking-fault potential and the exciton wave function in GaAs

et al. 2020

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Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stackingfault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system. arXiv:1911.00342v1 [cond-mat.mes-hall] 1 Nov 2019

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Microphotoluminescence of oval defects in a GaAs layer grown by molecular beam epitaxy

Cited by 11 publications

References 12 publications

Emission from Mesoscopic-Size Islands Formed in a GaAs/AlAs Double Layer Structure

Emission from Mesoscopic-Size Islands Formed in a GaAs/AlAs Double Layer Structure

Optical visualization of radiative recombination at partial dislocations in GaAs

Microscopic model for the stacking-fault potential and the exciton wave function in GaAs

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