Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

Rendakova, S.; Никитина, И.П.; Tregubova, A. S.; Dmitriev, V.

doi:10.1007/s11664-998-0402-y

Cited by 31 publications

(13 citation statements)

References 5 publications

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“…[3][4][5] Research grade 35 mm and 40 mm diameter 6H-SiC 3.5° offaxis and 4H-SiC 8° off-axis wafers manufactured by Cree Research, Inc. were used as initial substrates. All experiments were done on the (0001) Si face of the SiC wafers.…”

Section: Cvd Growth On Reduced Micropipe Density Substratesmentioning

confidence: 99%

TEM investigation of silicon carbide wafers with reduced micropipe density

Saddow

Schattner

Shamsuzzoha

et al. 2000

Journal of Elec Materi

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Section: Cvd Growth On Reduced Micropipe Density Substratesmentioning

confidence: 99%

TEM investigation of silicon carbide wafers with reduced micropipe density

Saddow

Schattner

Shamsuzzoha

et al. 2000

Journal of Elec Materi

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“…The growth of SiC from binary Si-rich Si-C solutions has been investigated to take advantage of its thermal equilibrium conditions [2]. Although the reduction of dislocation density has been reported in the solution-grown SiC, the growth rate was low owing to the low carbon solubility, and high temperatures were required when using a binary Si-C solution.…”

Section: Introductionmentioning

confidence: 99%

Screening of metal flux for SiC solution growth by a thin-film combinatorial method

Yonezawa

Rais‐Zadeh

Takigawa

et al. 2011

Science and Technology of Advanced Materials

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Abstract4H-SiC is a wide-bandgap semiconductor with potential applications in power devices. The lack of a liquid phase in SiC hinders conventional crystal growth from the melt; consequently, SiC wafers still have low quality and are nearly 100 times more expensive than Si wafers. To take advantage of the solution growth for improving the quality and reducing the cost of SiC, Ni addition to Si-Ti flux has been investigated. A combinatorial approach was employed to accelerate the screening of metal flux for the SiC solution growth.

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“…The solution growth of SiC has been studied primarily for use in healing micropipes in crystals formed by PVD. [1][2][3][4][5][6][7][8][9] These major defects originate from screw dislocations and continue to propagate during PVD. The solvent used is a silicon-based alloy, either molten silicon, [1][2][3][4][5][6] Si-Sc 7) or Si-Ge.…”

Section: Introductionmentioning

confidence: 99%

Solution Growth of Silicon Carbide Using Fe–Si Solvent

Yoshikawa

Kawanishi

Tanaka

2010

Jpn. J. Appl. Phys.

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In this paper, we describe the use of liquid Fe–Si alloy as the solvent for the solution growth of silicon carbide (SiC). Iron was chosen owing to the high solubility of carbon in molten iron. The crystal growth of SiC from Fe–40 mol % Si solvent on a seed crystal wafer of 6H- or 4H-SiC was carried out at 1,623–1,723 K using induction heating. The growth rate of SiC was obtained to be 90–260 µm/h. Furthermore, Raman spectroscopy revealed homo epitaxial growth on both 6H- and 4H-SiC under the experimental conditions used. Thus, the Fe–Si solvent was found to be effective for the rapid solution growth of SiC.

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Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

Cited by 31 publications

References 5 publications

TEM investigation of silicon carbide wafers with reduced micropipe density

TEM investigation of silicon carbide wafers with reduced micropipe density

Screening of metal flux for SiC solution growth by a thin-film combinatorial method

Solution Growth of Silicon Carbide Using Fe–Si Solvent

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