Micropipe Healing in Liquid Phase Epitaxial Growth of SiC

Yakimova, Rositsa; Syväjärvi, Mikael; Rendakova, S.; Dimitriev, V.; Henry, Anne; Janzén, Erik

doi:10.4028/www.scientific.net/msf.338-342.237

Cited by 29 publications

(22 citation statements)

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“…Epitaxy (LPE) of SiC is known as an effective technique to overgrow micropipe defects in wafers prepared from (0001) bulk crystals obtained by the PVT technique [13][14][15][16][17]. Growth processes performed under conditions very close to thermodynamic equilibrium (e.g.…”

Section: Homoepitaxial Liquid Phase Epitaxy Growth On Basal and Rhombmentioning

confidence: 99%

“…The so-called "healing effect" of LPE has been demonstrated earlier in several studies [13][14][15][16][17]. However, the structures resulting from the transformation of MPs in the course of LPE were described only briefly and no transformation mechanism was proposed.…”

mentioning

confidence: 96%

“…However, the structures resulting from the transformation of MPs in the course of LPE were described only briefly and no transformation mechanism was proposed. For example, the images of healed MP in [14,15] represent circular pits 20-40 µm in diameter, much larger than any hollow-core dislocation-based micropipe could be.…”

mentioning

confidence: 99%

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Bulk and epitaxial growth of micropipe‐free silicon carbide on basal and rhombohedral plane seeds

Epelbaum¹,

Filip

Winnacker

2008

Physica Status Solidi (b)

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Section: Homoepitaxial Liquid Phase Epitaxy Growth On Basal and Rhombmentioning

confidence: 99%

mentioning

confidence: 96%

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Bulk and epitaxial growth of micropipe‐free silicon carbide on basal and rhombohedral plane seeds

Epelbaum¹,

Filip

Winnacker

2008

Physica Status Solidi (b)

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“…SiC epitaxial layers grown by liquid-phase epitaxy (LPE) have mainly been used for the fabrication on PN junctions used in LEDs. This technique was the first to show the possibility of filling or "closing" micropipes, [8] a mechanism which was later also reported to occur during CVD growth. [9] The LPE technique has the advantage of providing high growth rates (up to few hundred of mm h -1 ), [10] however, the surface morphology is not as good as that achieved by other growth techniques and, due to the high temperatures used, similar problems as for the sublimation technique occur.…”

Section: Introductionmentioning

confidence: 95%

Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques

Henry

Ul-Hassan

Bergman

et al. 2006

Chemical Vapor Deposition

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The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is described for two types (horizontal and vertical) of hot-wall (HW) CVD reactors. In both cases, the advantages of HWCVD are the better cracking efficiency of the precursor gases and better temperature distribution together with low input power. Characterizations of some examples of thick SiC layers grown are given.

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“…In the case of SiC, even if the resulting material can be of very high structural quality [5] and the possibility to close the micropipes was demonstrated [6], too few studies have been conducted to lead to convincing results. Moreover, the two main difficulties are first the handling of the liquid silicon at high temperature and second the control of the growth front.…”

Section: Introductionmentioning

confidence: 98%

Experimental investigation of different configurations for the seeded growth of SiC crystals via a VLS mechanism

Boutarek¹,

Bonda

Chaussende

et al. 2008

Cryst. Res. Technol.

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The growth of SiC crystals or epilayers from the liquid phase has already been reported for many years. Even if the resulting material can be of very high structural quality and the possibility to close micropipes was demonstrated, handling the liquid phase still is a challenge. Moreover, it is highly difficult to stabilize the C dissolution front and then to stabilize the growth front over a long growth time. Based on the Vapour-LiquidSolid (VLS) mechanism, we present a new configuration for the growth of SiC single crystal which should allow first to simplify the liquid handling at high temperature and second to precisely control the crystal growth front. The process consists in a modified top and bottom seeded solution growth method, in which the liquid is held under electromagnetic levitation and fed from the gas phase. 3C-SiC crystals exhibiting wellfaceted morphology were successfully obtained at 1100-1200°C with exceptional growth rates, varying from 1 to 1.5 mm/h in Ti-Si melt. It was shown that the nucleation density decreases simultaneously with increasing propane partial pressure. At 1200-1400°C, thick homoepitaxial 6H-SiC layers were successfully obtained in Co-Si and Ti-Si melts, with growth rate up to 200 µm/h. Large terraces with smooth surfaces are observed suggesting a layer by layer growth mode, and the influence of the system pressure was demonstrated. It was shown that the terrace size decrease simultaneously with increasing propane partial pressure which suggests the beginning of a two dimensional to three dimensional growth mode transition.

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Micropipe Healing in Liquid Phase Epitaxial Growth of SiC

Cited by 29 publications

References 0 publications

Bulk and epitaxial growth of micropipe‐free silicon carbide on basal and rhombohedral plane seeds

Bulk and epitaxial growth of micropipe‐free silicon carbide on basal and rhombohedral plane seeds

Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques

Experimental investigation of different configurations for the seeded growth of SiC crystals via a VLS mechanism

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