2020
DOI: 10.35848/1347-4065/ab9232
|View full text |Cite
|
Sign up to set email alerts
|

Microring resonators with circular element inner-wall gratings for enhanced sensing

Abstract: We suggest that implementation of a circular element second order Bragg grating 1D photonic crystals into the inner-wall of silicon-on-insulator microring resonators increases the light-matter interaction strength and device free spectral range. Introduction of a specifically tailored grating changes the quality factor of a selected resonance and modulates the losses of the system, leading to the presence of longitudinal resonant air and dielectric Bloch modes. This phenomenon can be harnessed for the developm… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
3
2
1

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(3 citation statements)
references
References 32 publications
0
3
0
Order By: Relevance
“…The spectral response of the device is calculated using the scattering matrix method [7,9]. In the device model, we use waveguide group index of ng = 4.3350 (transverse electric (TE) mode) and propagation loss of α = 55 m -1 (i.e., 2.4 dB/cm), which are in line with our previously fabricated siliconon-insulator (SOI) devices [7,8,12]. The device is designed based on, but not limited to, the SOI platform.…”
Section: Device Configurationmentioning
confidence: 99%
“…The spectral response of the device is calculated using the scattering matrix method [7,9]. In the device model, we use waveguide group index of ng = 4.3350 (transverse electric (TE) mode) and propagation loss of α = 55 m -1 (i.e., 2.4 dB/cm), which are in line with our previously fabricated siliconon-insulator (SOI) devices [7,8,12]. The device is designed based on, but not limited to, the SOI platform.…”
Section: Device Configurationmentioning
confidence: 99%
“…The spectral response of the device is calculated using the scattering matrix method [7,9]. In the device model, we use waveguide group index of n g = 4.3350 (transverse electric (TE) mode) and propagation loss of α = 55 m -1 (i.e., 2.4 dB/cm), which are in line with our previously fabricated siliconon-insulator (SOI) devices [7,8,12]. The device is designed based on, but not limited to, the SOI platform.…”
Section: Device Configurationmentioning
confidence: 99%
“…The Silicon On Insulator SOI(Silicon On Insulator) is a kind of multi-layer artificial material, compatible with mature complementary metal-oxide-semiconductor (CMOS) technology. The made device has a compact structure which can effectively reduce the size of the device [1,2]. Therefore, the device structure based on SOI platform has become a research hotspot in the field of silicon-based photonic integration and optoelectronic integration.…”
Section: Introductionmentioning
confidence: 99%